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A 54 µW CMOS Auto-Trimming Bandgap References (ATBGR) Achieving 90 dB PSRR for Artificial Intelligence of Things (AIoT) Chips
An Auto-Trimming CMOS Bandgap References Circuit (ATBGR) with PSRR enhancement circuit for Artificial Intelligence of Things (AIoT) chips is presented in this paper. The ATBGR is designed with a first-order temperature compensation technique providing a stable reference voltage of 1.25 V in the rang...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10535921/ https://www.ncbi.nlm.nih.gov/pubmed/37763888 http://dx.doi.org/10.3390/mi14091724 |
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author | Poongan, Balamahesn Rajendran, Jagadheswaran Mariappan, Selvakumar Rawat, Arvind Singh Kumar, Narendra Nathan, Arokia Yarman, Binboga S. |
author_facet | Poongan, Balamahesn Rajendran, Jagadheswaran Mariappan, Selvakumar Rawat, Arvind Singh Kumar, Narendra Nathan, Arokia Yarman, Binboga S. |
author_sort | Poongan, Balamahesn |
collection | PubMed |
description | An Auto-Trimming CMOS Bandgap References Circuit (ATBGR) with PSRR enhancement circuit for Artificial Intelligence of Things (AIoT) chips is presented in this paper. The ATBGR is designed with a first-order temperature compensation technique providing a stable reference voltage of 1.25 V in the ranges of input voltages from 1.65 V to 4.5 V. An auto-trimming circuit is integrated into a PTAT resistor of BGR to minimize the influences of the process variations. The four parallel resistor pairs with PMOS switches are connected in series with the PTAT resistor. The reference voltage, V(REF), is compared to an external constant value, 1.25 V, through an operational amplifier, and the output of the de-multiplexer is used to configure the PMOS switches. High power supply rejection is achieved through a PSRR enhancement circuit constituting a cascaded PMOS common gate pair. The ATBGR circuit is fabricated in 180 nm CMOS technology, consuming an area of 0.03277 mm(2). The auto-trimming method yields an average temperature coefficient of 9.99 ppm/°C with temperature ranges from −40 °C to 125 °C, and a power supply rejection ratio of −90 dB at 100 MHz is obtained. The line regulation of the proposed circuit is 0.434%/V with power consumption of 54.12 µW at room temperature. |
format | Online Article Text |
id | pubmed-10535921 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-105359212023-09-29 A 54 µW CMOS Auto-Trimming Bandgap References (ATBGR) Achieving 90 dB PSRR for Artificial Intelligence of Things (AIoT) Chips Poongan, Balamahesn Rajendran, Jagadheswaran Mariappan, Selvakumar Rawat, Arvind Singh Kumar, Narendra Nathan, Arokia Yarman, Binboga S. Micromachines (Basel) Article An Auto-Trimming CMOS Bandgap References Circuit (ATBGR) with PSRR enhancement circuit for Artificial Intelligence of Things (AIoT) chips is presented in this paper. The ATBGR is designed with a first-order temperature compensation technique providing a stable reference voltage of 1.25 V in the ranges of input voltages from 1.65 V to 4.5 V. An auto-trimming circuit is integrated into a PTAT resistor of BGR to minimize the influences of the process variations. The four parallel resistor pairs with PMOS switches are connected in series with the PTAT resistor. The reference voltage, V(REF), is compared to an external constant value, 1.25 V, through an operational amplifier, and the output of the de-multiplexer is used to configure the PMOS switches. High power supply rejection is achieved through a PSRR enhancement circuit constituting a cascaded PMOS common gate pair. The ATBGR circuit is fabricated in 180 nm CMOS technology, consuming an area of 0.03277 mm(2). The auto-trimming method yields an average temperature coefficient of 9.99 ppm/°C with temperature ranges from −40 °C to 125 °C, and a power supply rejection ratio of −90 dB at 100 MHz is obtained. The line regulation of the proposed circuit is 0.434%/V with power consumption of 54.12 µW at room temperature. MDPI 2023-09-01 /pmc/articles/PMC10535921/ /pubmed/37763888 http://dx.doi.org/10.3390/mi14091724 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Poongan, Balamahesn Rajendran, Jagadheswaran Mariappan, Selvakumar Rawat, Arvind Singh Kumar, Narendra Nathan, Arokia Yarman, Binboga S. A 54 µW CMOS Auto-Trimming Bandgap References (ATBGR) Achieving 90 dB PSRR for Artificial Intelligence of Things (AIoT) Chips |
title | A 54 µW CMOS Auto-Trimming Bandgap References (ATBGR) Achieving 90 dB PSRR for Artificial Intelligence of Things (AIoT) Chips |
title_full | A 54 µW CMOS Auto-Trimming Bandgap References (ATBGR) Achieving 90 dB PSRR for Artificial Intelligence of Things (AIoT) Chips |
title_fullStr | A 54 µW CMOS Auto-Trimming Bandgap References (ATBGR) Achieving 90 dB PSRR for Artificial Intelligence of Things (AIoT) Chips |
title_full_unstemmed | A 54 µW CMOS Auto-Trimming Bandgap References (ATBGR) Achieving 90 dB PSRR for Artificial Intelligence of Things (AIoT) Chips |
title_short | A 54 µW CMOS Auto-Trimming Bandgap References (ATBGR) Achieving 90 dB PSRR for Artificial Intelligence of Things (AIoT) Chips |
title_sort | 54 µw cmos auto-trimming bandgap references (atbgr) achieving 90 db psrr for artificial intelligence of things (aiot) chips |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10535921/ https://www.ncbi.nlm.nih.gov/pubmed/37763888 http://dx.doi.org/10.3390/mi14091724 |
work_keys_str_mv | AT poonganbalamahesn a54μwcmosautotrimmingbandgapreferencesatbgrachieving90dbpsrrforartificialintelligenceofthingsaiotchips AT rajendranjagadheswaran a54μwcmosautotrimmingbandgapreferencesatbgrachieving90dbpsrrforartificialintelligenceofthingsaiotchips AT mariappanselvakumar a54μwcmosautotrimmingbandgapreferencesatbgrachieving90dbpsrrforartificialintelligenceofthingsaiotchips AT rawatarvindsingh a54μwcmosautotrimmingbandgapreferencesatbgrachieving90dbpsrrforartificialintelligenceofthingsaiotchips AT kumarnarendra a54μwcmosautotrimmingbandgapreferencesatbgrachieving90dbpsrrforartificialintelligenceofthingsaiotchips AT nathanarokia a54μwcmosautotrimmingbandgapreferencesatbgrachieving90dbpsrrforartificialintelligenceofthingsaiotchips AT yarmanbinbogas a54μwcmosautotrimmingbandgapreferencesatbgrachieving90dbpsrrforartificialintelligenceofthingsaiotchips AT poonganbalamahesn 54μwcmosautotrimmingbandgapreferencesatbgrachieving90dbpsrrforartificialintelligenceofthingsaiotchips AT rajendranjagadheswaran 54μwcmosautotrimmingbandgapreferencesatbgrachieving90dbpsrrforartificialintelligenceofthingsaiotchips AT mariappanselvakumar 54μwcmosautotrimmingbandgapreferencesatbgrachieving90dbpsrrforartificialintelligenceofthingsaiotchips AT rawatarvindsingh 54μwcmosautotrimmingbandgapreferencesatbgrachieving90dbpsrrforartificialintelligenceofthingsaiotchips AT kumarnarendra 54μwcmosautotrimmingbandgapreferencesatbgrachieving90dbpsrrforartificialintelligenceofthingsaiotchips AT nathanarokia 54μwcmosautotrimmingbandgapreferencesatbgrachieving90dbpsrrforartificialintelligenceofthingsaiotchips AT yarmanbinbogas 54μwcmosautotrimmingbandgapreferencesatbgrachieving90dbpsrrforartificialintelligenceofthingsaiotchips |