A Buried Thermal Rail (BTR) Technology to Improve Electrothermal Characteristics of Complementary Field-Effect Transistor (CFET)

The complementary field-effect transistor (CFET) with N-type FET (NFET) stacked on P-type FET (PFET) is a promising device structure based on gate-all-around FET (GAAFET). Because of the high-density stacked structure, the self-heating effect (SHE) becomes more and more severe. Buried thermal rail (...

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Detalles Bibliográficos
Autores principales: Pan, Zhecheng, Liu, Tao, Yang, Jingwen, Chen, Kun, Xu, Saisheng, Wu, Chunlei, Xu, Min, Zhang, David Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10536949/
https://www.ncbi.nlm.nih.gov/pubmed/37763913
http://dx.doi.org/10.3390/mi14091751

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10536949/
https://www.ncbi.nlm.nih.gov/pubmed/37763913
http://dx.doi.org/10.3390/mi14091751

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