Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs

In this work, the effects of total dose irradiation on the parasitic bipolar junction transistor (BTJ) in 130 nm PDSOI MOSFETs were investigated. The experimental results demonstrate that irradiation-induced oxide-trap charges can modify the E-B junction barrier, and thereby make the common-emitter...

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Detalles Bibliográficos
Autores principales: Jia, Yupeng, Zhang, Zhengxuan, Bi, Dawei, Hu, Zhiyuan, Zou, Shichang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10537965/
https://www.ncbi.nlm.nih.gov/pubmed/37763842
http://dx.doi.org/10.3390/mi14091679

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10537965/
https://www.ncbi.nlm.nih.gov/pubmed/37763842
http://dx.doi.org/10.3390/mi14091679

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