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Effect of Total Dose Irradiation on Parasitic BJT in 130 nm PDSOI MOSFETs
In this work, the effects of total dose irradiation on the parasitic bipolar junction transistor (BTJ) in 130 nm PDSOI MOSFETs were investigated. The experimental results demonstrate that irradiation-induced oxide-trap charges can modify the E-B junction barrier, and thereby make the common-emitter...
Autores principales: | Jia, Yupeng, Zhang, Zhengxuan, Bi, Dawei, Hu, Zhiyuan, Zou, Shichang |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10537965/ https://www.ncbi.nlm.nih.gov/pubmed/37763842 http://dx.doi.org/10.3390/mi14091679 |
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