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Charge Polarity Control in Organic Transistors of Mixed and Segregated Complexes Based on Diaminonaphthalene and Pyrene
[Image: see text] Organic cocrystals of diaminonaphthalene (DAN) and diaminopyrene (DAP) with bromanil (BA) and tetracyanoquinodimethane (TCNQ) are an exemplar system for understanding the charge-transport process, where from the viewpoint of partition theory, orbital symmetry plays a crucial role i...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10540136/ https://www.ncbi.nlm.nih.gov/pubmed/37713417 http://dx.doi.org/10.1021/acsami.3c10583 |
Sumario: | [Image: see text] Organic cocrystals of diaminonaphthalene (DAN) and diaminopyrene (DAP) with bromanil (BA) and tetracyanoquinodimethane (TCNQ) are an exemplar system for understanding the charge-transport process, where from the viewpoint of partition theory, orbital symmetry plays a crucial role in controlling the carrier charge polarity of transistors. In the mixed-stack complexes of BA and other p-quinone acceptors, a comparatively weak donor, 1,5-DAN, shows p-channel characteristics owing to the counteractive contribution of the next highest occupied molecular orbital for electron transport. This characteristic behavior occurs because the BA molecule, situated on top of the amino group, overlaps with half of the DAN molecule. By contrast, the BA and TCNQ complexes of a stronger donor, 1,6-DAP, exhibit n-channel transport due to the cooperative path and orthogonal orbitals. Similarly, TCNQ complexes of variously substituted DAN show n-channel transport, where the TCNQ molecules are located on top of the DAN molecules. However, when the carbon electrodes of (1,5-DAN)(BA) are replaced by silver, electron transport appears due to the competitive effect of the Schottky barriers. In a highly conducting segregated complex of (1,6-DAP)(TCNQ), ambipolar transistor characteristics are observed without subtracting the bulk current by using carefully prepared thin-film transistors. |
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