Electronic strengthening mechanism of covalent Si via excess electron/hole doping

Brittle fracture of a covalent material is ultimately governed by the strength of the electronic bonds. Recently, attempts have been made to alter the mechanical properties including fracture strength by excess electron/hole doping. However, the underlying mechanics/mechanism of how these doped elec...

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Detalles Bibliográficos
Autores principales: Noda, Hiroki, Sakaguchi, Shumpei, Fujita, Ryoga, Minami, Susumu, Hirakata, Hiroyuki, Shimada, Takahiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10545711/
https://www.ncbi.nlm.nih.gov/pubmed/37783753
http://dx.doi.org/10.1038/s41598-023-42676-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10545711/
https://www.ncbi.nlm.nih.gov/pubmed/37783753
http://dx.doi.org/10.1038/s41598-023-42676-z

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