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Electronic strengthening mechanism of covalent Si via excess electron/hole doping
Brittle fracture of a covalent material is ultimately governed by the strength of the electronic bonds. Recently, attempts have been made to alter the mechanical properties including fracture strength by excess electron/hole doping. However, the underlying mechanics/mechanism of how these doped elec...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10545711/ https://www.ncbi.nlm.nih.gov/pubmed/37783753 http://dx.doi.org/10.1038/s41598-023-42676-z |