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Effect of oxygen vacancy and Si doping on the electrical properties of Ta(2)O(5) in memristor characteristics
The resistive switching behavior in Ta(2)O(5) based memristors is largely controlled by the formation and annihilation of conductive filaments (CFs) that are generated by the migration of oxygen vacancies (OVs). To gain a fundamental insight on the switching characteristics, we have systematically i...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10547760/ https://www.ncbi.nlm.nih.gov/pubmed/37789156 http://dx.doi.org/10.1038/s41598-023-43888-z |