Cargando…
Improved performance of quantum dot solar cells by type-II InAs/GaAsSb structure with moderate Sb composition
We demonstrate improved performance of quantum dot solar cells (QDSCs) by type-II InAs/GaAsSb structure. With a moderate Sb composition of 18% and high quality QDs, a high efficiency of 17.31% under AM1.5 G illumination is achieved, showing an improvement of 11.25% in efficiency relative to type-I I...
Autores principales: | Wang, Shenglin, Wang, Shuai, Yang, Xiaoguang, Lv, Zunren, Chai, Hongyu, Meng, Lei, Yang, Tao |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Elsevier
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10559738/ https://www.ncbi.nlm.nih.gov/pubmed/37810090 http://dx.doi.org/10.1016/j.heliyon.2023.e20005 |
Ejemplares similares
-
Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers
por: Salhi, A., et al.
Publicado: (2019) -
Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers
por: Loeber, Thomas H, et al.
Publicado: (2011) -
Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components
por: Li, Haolin, et al.
Publicado: (2019) -
Suppression of dislocations by Sb spray in the vicinity of InAs/GaAs quantum dots
por: Dai, Liping, et al.
Publicado: (2014) -
Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots
por: Reyes, Daniel F, et al.
Publicado: (2012)