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Intrinsic half-metallicity in two-dimensional Cr(2)TeX(2) (X = I, Br, Cl) monolayers
Two-dimensional (2D) materials with intrinsic half-metallicity at or above room temperature are important in spin nanodevices. Nevertheless, such 2D materials in experiment are still rarely realized. In this work, a new family of 2D Cr(2)TeX(2) (X = I, Br, Cl) monolayers has been predicted using fir...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10562977/ https://www.ncbi.nlm.nih.gov/pubmed/37822665 http://dx.doi.org/10.1039/d3ra05780a |
Sumario: | Two-dimensional (2D) materials with intrinsic half-metallicity at or above room temperature are important in spin nanodevices. Nevertheless, such 2D materials in experiment are still rarely realized. In this work, a new family of 2D Cr(2)TeX(2) (X = I, Br, Cl) monolayers has been predicted using first-principles calculations. The monolayer is made of five atomic sublayers with ABCAB-type stacking along the perpendicular direction. It is found that the energies for all the ferromagnetic (FM) half-metallic states are the lowest. The phonon spectrum calculations and molecular dynamics simulations both demonstrate that the FM states are stable, indicating the possibility of experimentally obtaining the 2D Cr(2)TeX(2) monolayers with half-metallicity. The Curie temperatures from Monte Carlo simulations are 486, 445, and 451 K for Cr(2)TeI(2), Cr(2)TeBr(2), and Cr(2)TeCl(2) monolayers, respectively, and their half-metallic bandgaps are 1.72, 1.86 and 1.90 eV. The corresponding magnetocrystalline anisotropy energies (MAEs) are about 1185, 502, 899 μeV per Cr atom for Cr(2)TeX(2) monolayers, in which the easy axes are along the plane for the Cr(2)TeBr(2) and Cr(2)TeCl(2) monolayers, but being out of the plane in the Cr(2)TeI(2). Our study implies the potential application of the 2D Cr(2)TeX(2) (X = I, Br, Cl) monolayers in spin nanodevices. |
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