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Influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100)

Developing borophene films with good structural stability on non-metallic substrates to maximize their potential in photosensitivity, gas detection, photothermia, energy storage, and deformation detection, among others has been challenging in recent years. Herein, we succeeded in the pulsed laser de...

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Autores principales: Rivera-Tello, César D., Guerrero, J. A., Huerta, L., Flores-Ruiz, Francisco J., Flores, M., Quiñones-Galván, J. G.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10566584/
https://www.ncbi.nlm.nih.gov/pubmed/37829715
http://dx.doi.org/10.1039/d3ra04601j
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author Rivera-Tello, César D.
Guerrero, J. A.
Huerta, L.
Flores-Ruiz, Francisco J.
Flores, M.
Quiñones-Galván, J. G.
author_facet Rivera-Tello, César D.
Guerrero, J. A.
Huerta, L.
Flores-Ruiz, Francisco J.
Flores, M.
Quiñones-Galván, J. G.
author_sort Rivera-Tello, César D.
collection PubMed
description Developing borophene films with good structural stability on non-metallic substrates to maximize their potential in photosensitivity, gas detection, photothermia, energy storage, and deformation detection, among others has been challenging in recent years. Herein, we succeeded in the pulsed laser deposition of multilayered borophene films on Si (100) with β(12) or χ(3) bonding by tuning the mean kinetic energy in the plasma during the deposition process. Raman and X-ray photoelectron spectroscopies confirm β(12) and χ(3) bonding in the films. Borophene films with β(12) bonding were obtained by tuning a high mean kinetic energy in the plasma, while borophene with χ(3) bonding required a relatively low mean kinetic energy. Atomic force microscopy (AFM) micrographs revealed a granular and directional growth of the multilayered borophene films following the linear atomic terraces from the (100) silicon substrate. AFM nanofriction was used to access the borophene surfaces and to reveal the pull-off force and friction coefficient of the films where the surface oxide showed a significant contribution. To summarize, we show that it is possible to deposit multilayered borophene thin films with different bondings by tuning the mean kinetic energy during pulsed laser deposition. The characterization of the plasma during borophene deposition accompanies our findings, providing support for the changes in kinetic energy.
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spelling pubmed-105665842023-10-12 Influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100) Rivera-Tello, César D. Guerrero, J. A. Huerta, L. Flores-Ruiz, Francisco J. Flores, M. Quiñones-Galván, J. G. RSC Adv Chemistry Developing borophene films with good structural stability on non-metallic substrates to maximize their potential in photosensitivity, gas detection, photothermia, energy storage, and deformation detection, among others has been challenging in recent years. Herein, we succeeded in the pulsed laser deposition of multilayered borophene films on Si (100) with β(12) or χ(3) bonding by tuning the mean kinetic energy in the plasma during the deposition process. Raman and X-ray photoelectron spectroscopies confirm β(12) and χ(3) bonding in the films. Borophene films with β(12) bonding were obtained by tuning a high mean kinetic energy in the plasma, while borophene with χ(3) bonding required a relatively low mean kinetic energy. Atomic force microscopy (AFM) micrographs revealed a granular and directional growth of the multilayered borophene films following the linear atomic terraces from the (100) silicon substrate. AFM nanofriction was used to access the borophene surfaces and to reveal the pull-off force and friction coefficient of the films where the surface oxide showed a significant contribution. To summarize, we show that it is possible to deposit multilayered borophene thin films with different bondings by tuning the mean kinetic energy during pulsed laser deposition. The characterization of the plasma during borophene deposition accompanies our findings, providing support for the changes in kinetic energy. The Royal Society of Chemistry 2023-10-11 /pmc/articles/PMC10566584/ /pubmed/37829715 http://dx.doi.org/10.1039/d3ra04601j Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by/3.0/
spellingShingle Chemistry
Rivera-Tello, César D.
Guerrero, J. A.
Huerta, L.
Flores-Ruiz, Francisco J.
Flores, M.
Quiñones-Galván, J. G.
Influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100)
title Influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100)
title_full Influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100)
title_fullStr Influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100)
title_full_unstemmed Influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100)
title_short Influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100)
title_sort influence of plasma kinetic energy during the pulsed laser deposition of borophene films on silicon (100)
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10566584/
https://www.ncbi.nlm.nih.gov/pubmed/37829715
http://dx.doi.org/10.1039/d3ra04601j
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