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Performance evaluation of ZnSnN(2) solar cells with Si back surface field using SCAPS-1D: A theoretical study

The earth-abundant semiconductor zinc tin nitride (ZnSnN(2)) has garnered significant attention as a prospective material in photovoltaic and lighting applications, primarily due to its tunable narrow bandgap and high absorption coefficient. This study focuses on a numerical investigation of ZnSnN(2...

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Detalles Bibliográficos
Autores principales: Laidouci, Abdelmoumene, Mamta, Singh, V.N., Dakua, Pratap Kumar, Panda, Deepak Kumar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10568353/
https://www.ncbi.nlm.nih.gov/pubmed/37842560
http://dx.doi.org/10.1016/j.heliyon.2023.e20601
Descripción
Sumario:The earth-abundant semiconductor zinc tin nitride (ZnSnN(2)) has garnered significant attention as a prospective material in photovoltaic and lighting applications, primarily due to its tunable narrow bandgap and high absorption coefficient. This study focuses on a numerical investigation of ZnSnN(2) solar cell structures using the SCAPS 1-D software. The objective is to analyze the influence of various physical and geometrical parameters on solar cell performance. These parameters include the thicknesses of the ZnO window layer, CdS buffer layer, ZnSnN(2) absorber layer, and Si back surface field layer (BSF), as well as operating temperature, series and shunt resistances (R(S) and R(sh)), absorber layer defect density, interface defects, and the generation-recombination profile of the n-ZnO:Al/n-CdS/p-ZnSnN(2)/p-Si/Mo structure. We have evaluated the capabilities of this novel material absorber by investigating its performance across a range of thicknesses. We have started with ultrathin absorber thicknesses and gradually increased them to thicker levels to determine the optimal thickness for achieving high efficiency. Under optimal conditions, a thin solar cell with a thickness (w(p)) of 1 μm achieved an efficiency (η) of 23.9%. In a practical solar cell operating at room temperature, optimal parameters were observed with a thicker absorber layer (w(p) = 8 μm) and a BSF width of 0.3 μm. The cell exhibited resistances of R(sh) = 10(6) Ω cm(2) and R(s) = 1 Ω cm(2), along with a low defect density (N(t) = 10(10) cm(−3)) in the ZnSnN(2) semiconductor. These factors combined to yield an impressive efficiency of 29.5%. Numerous studies on emerging ternary nitride semiconductors (Zn-IV-N(2)) have highlighted ZnSnN(2) as a promising material for thin-film photovoltaics. This compound is appealing due to its abundance, non-toxicity, and cost-effectiveness. Unlike conventional solar cells that depend on rare, toxic, and costly elements, these components are still essential for today's solar cell technology.