Process integration and future outlook of 2D transistors

The academic and industrial communities have proposed two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors as a future option to supplant silicon transistors at sub-10nm physical gate lengths. In this Comment, we share the recent progress in the fabrication of complementary meta...

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Detalles Bibliográficos
Autores principales: O’Brien, Kevin P., Naylor, Carl H., Dorow, Chelsey, Maxey, Kirby, Penumatcha, Ashish Verma, Vyatskikh, Andrey, Zhong, Ting, Kitamura, Ande, Lee, Sudarat, Rogan, Carly, Mortelmans, Wouter, Kavrik, Mahmut Sami, Steinhardt, Rachel, Buragohain, Pratyush, Dutta, Sourav, Tronic, Tristan, Clendenning, Scott, Fischer, Paul, Putna, Ernisse S., Radosavljevic, Marko, Metz, Matt, Avci, Uygar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Comment
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10570266/
https://www.ncbi.nlm.nih.gov/pubmed/37828036
http://dx.doi.org/10.1038/s41467-023-41779-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10570266/
https://www.ncbi.nlm.nih.gov/pubmed/37828036
http://dx.doi.org/10.1038/s41467-023-41779-5

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