Intrinsically dominated anomalous Hall effect in pulsed laser deposited epitaxial Co(2)MnGe ferromagnetic full Heusler alloy thin films

Large size epitaxial thin films of ferromagnetic Co(2)MnGe full Heusler alloy are grown over MgO(100) substrate by using pulsed laser deposition technique under optimized growth conditions. Metallic behavior is confirmed from the longitudinal resistivity-temperature data, while a minimum in the resistivity at ∼25 K is attributed to the disorder-induced weak localization effect. Importantly, a dominating intrinsic anomalous Hall conductivity value of ∼21 S cm(−1) against an overall anomalous Hall conductivity value of ∼36 S cm(−1) at the room temperature has been estimated for the epitaxial Co(2)MnGe film. The dominating intrinsic mechanism is also evident from the near temperature-independent behavior of the overall anomalous Hall conductivity.