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Assessing Effects of van der Waals Corrections on Elasticity of Mg(3)Bi(2−x)Sb(x) in DFT Calculations
As a promising room-temperature thermoelectric material, the elastic properties of Mg(3)Bi(2−x)Sb(x) (0 ≤ x ≤ 2), in which the role of van der Waals interactions is still elusive, were herein investigated. We assessed the effects of two typical van der Waals corrections on the elasticity of Mg(3)Bi(...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10573825/ https://www.ncbi.nlm.nih.gov/pubmed/37834619 http://dx.doi.org/10.3390/ma16196482 |
Sumario: | As a promising room-temperature thermoelectric material, the elastic properties of Mg(3)Bi(2−x)Sb(x) (0 ≤ x ≤ 2), in which the role of van der Waals interactions is still elusive, were herein investigated. We assessed the effects of two typical van der Waals corrections on the elasticity of Mg(3)Bi(2−x)Sb(x) nanocomposites using first-principles calculations within the frame of density functional theory. The two van der Waals correction methods, PBE-D3 and vdW-DFq, were examined and compared to PBE functionals without van der Waals correction. Interestingly, our findings reveal that the lattice constant of the system shrinks by approximately 1% when the PBE-D3 interaction is included. This leads to significant changes in certain mechanical properties. We conducted a comprehensive assessment of the elastic performance of Mg(3)Bi(2−x)Sb(x), including Young’s modulus, Poisson’s ratio, bulk modulus, etc., for different concentration of Sb in a 40-atom simulation box. The presence or absence of van der Waals corrections does not change the trend of elasticity with respect to the concentration of Sb; instead, it affects the absolute values. Our investigation not only clarifies the influence of van der Waals correction methods on the elasticity of Mg(3)Bi(2−x)Sb(x), but could also help inform the material design of room-temperature thermoelectric devices, as well as the development of vdW corrections in DFT calculations. |
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