Constitutive Modeling of Annealed OFHC with Wide Strain-Rate and Temperature Effects: Incorporating Dislocation Dynamics and Normalized Microstructural Size Evolution

The flow stress of face-centered cubic (FCC) metals exhibits a rapid increase near a strain rate of 10(4) s(−1) under fixed-strain conditions. However, many existing constitutive models either fail to capture the mechanical characteristics of this plastic deformation or use piecewise strain-rate hardening models to describe this phenomenon. Unfortunately, these piecewise models may suffer from issues such as discontinuity of physical quantities and difficulties in determining segment markers, and struggle to reflect the underlying physical mechanisms that give rise to this mutation phenomenon. In light of this, this paper proposes that the abrupt change in flow stress sensitivity to strain rate in FCC metals can be attributed to microstructural evolution characteristics. To address this, a continuous semiempirical physical constitutive model for FCC metals is established based on the microstructural size evolution proposed by Molinari and Ravichandran and the dislocation motion slip mechanism. This model effectively describes the mutation behavior of strain-rate sensitivity under fixed strain, particularly evident in an annealed OFHC. The predicted results of the model across a wide range of strain rates (10(−4)–10(6) s(−1)) and temperatures (77–1096 K) demonstrate relative errors generally within ±10% of the experimental values. Furthermore, the model is compared with five other models, including the mechanical threshold stress (MTS), Nemat-Nasser–Li (NNL), Preston–Tonks–Wallace (PTW), Johnson–Cook (JC), and Molinari–Ravichandran (MR) models. A comprehensive illustration of errors reveals that the proposed model outperforms the other five models in describing the plastic deformation behavior of OFHC. The error results offer valuable insights for selecting appropriate models for engineering applications and provide significant contributions to the field.