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Controlling the Morphology of Tellurene for a High-Performance H(2)S Chemiresistive Room-Temperature Gas Sensor

A two-dimensional (2D) van der Waals material composed only of tellurium (Te) atoms—tellurene—is drawing attention because of its high intrinsic electrical conductivity and strong interaction with gas molecules, which could allow the development of high-performance chemiresistive sensors. However, t...

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Autores principales: Je, Yeonjin, Chee, Sang-Soo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10574203/
https://www.ncbi.nlm.nih.gov/pubmed/37836349
http://dx.doi.org/10.3390/nano13192707
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author Je, Yeonjin
Chee, Sang-Soo
author_facet Je, Yeonjin
Chee, Sang-Soo
author_sort Je, Yeonjin
collection PubMed
description A two-dimensional (2D) van der Waals material composed only of tellurium (Te) atoms—tellurene—is drawing attention because of its high intrinsic electrical conductivity and strong interaction with gas molecules, which could allow the development of high-performance chemiresistive sensors. However, the correlation between the morphologies and gas detection properties of tellurene has not yet been studied in depth, and few reports exist on tellurene-based hydrogen sulfide (H(2)S) chemiresistive sensors in spite of their strong interaction with H(2)S molecules. Here, we investigate the morphology-dependent H(2)S gas detection properties of tellurene synthesized using a hydrothermal method. To tailor the morphologies of tellurene, the molecular weight of the surfactant was controlled, revealing that a 1D or 2D form was synthesized and also accompanied with the high crystallinity. The 1D tellurene-based chemiresistive sensor presented superior H(2)S detection properties compared to the 2D form, achieving a gas response (R(g)/R(a)) of ~38, even at room temperature. This outstanding performance was attributed to the high intrinsic electrical conductivity and high specific surface area of the resultant 1D tellurene.
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spelling pubmed-105742032023-10-14 Controlling the Morphology of Tellurene for a High-Performance H(2)S Chemiresistive Room-Temperature Gas Sensor Je, Yeonjin Chee, Sang-Soo Nanomaterials (Basel) Article A two-dimensional (2D) van der Waals material composed only of tellurium (Te) atoms—tellurene—is drawing attention because of its high intrinsic electrical conductivity and strong interaction with gas molecules, which could allow the development of high-performance chemiresistive sensors. However, the correlation between the morphologies and gas detection properties of tellurene has not yet been studied in depth, and few reports exist on tellurene-based hydrogen sulfide (H(2)S) chemiresistive sensors in spite of their strong interaction with H(2)S molecules. Here, we investigate the morphology-dependent H(2)S gas detection properties of tellurene synthesized using a hydrothermal method. To tailor the morphologies of tellurene, the molecular weight of the surfactant was controlled, revealing that a 1D or 2D form was synthesized and also accompanied with the high crystallinity. The 1D tellurene-based chemiresistive sensor presented superior H(2)S detection properties compared to the 2D form, achieving a gas response (R(g)/R(a)) of ~38, even at room temperature. This outstanding performance was attributed to the high intrinsic electrical conductivity and high specific surface area of the resultant 1D tellurene. MDPI 2023-10-05 /pmc/articles/PMC10574203/ /pubmed/37836349 http://dx.doi.org/10.3390/nano13192707 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Je, Yeonjin
Chee, Sang-Soo
Controlling the Morphology of Tellurene for a High-Performance H(2)S Chemiresistive Room-Temperature Gas Sensor
title Controlling the Morphology of Tellurene for a High-Performance H(2)S Chemiresistive Room-Temperature Gas Sensor
title_full Controlling the Morphology of Tellurene for a High-Performance H(2)S Chemiresistive Room-Temperature Gas Sensor
title_fullStr Controlling the Morphology of Tellurene for a High-Performance H(2)S Chemiresistive Room-Temperature Gas Sensor
title_full_unstemmed Controlling the Morphology of Tellurene for a High-Performance H(2)S Chemiresistive Room-Temperature Gas Sensor
title_short Controlling the Morphology of Tellurene for a High-Performance H(2)S Chemiresistive Room-Temperature Gas Sensor
title_sort controlling the morphology of tellurene for a high-performance h(2)s chemiresistive room-temperature gas sensor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10574203/
https://www.ncbi.nlm.nih.gov/pubmed/37836349
http://dx.doi.org/10.3390/nano13192707
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