Enhanced Performance of GaAs Metal-Oxide-Semiconductor Capacitors Using a TaON/GeON Dual Interlayer

In this work, a dual interfacial passivation layer (IPL) consisting of TaON/GeON is implemented in GaAs metal-oxide-semiconductor (MOS) capacitors with ZrTaON as a high-k layer to obtain superior interfacial and electrical properties. As compared to the samples with only GeON IPL or no IPL, the samp...

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Detalles Bibliográficos
Autores principales: Liu, Lu, Li, Wanyu, Li, Fei, Xu, Jingping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10574759/
https://www.ncbi.nlm.nih.gov/pubmed/37836314
http://dx.doi.org/10.3390/nano13192673

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10574759/
https://www.ncbi.nlm.nih.gov/pubmed/37836314
http://dx.doi.org/10.3390/nano13192673

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