Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system

The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effective mass is found to be strongly enhanced and inde...

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Autores principales: Melnikov, M. Yu., Shakirov, A. A., Shashkin, A. A., Huang, S. H., Liu, C. W., Kravchenko, S. V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10575913/
https://www.ncbi.nlm.nih.gov/pubmed/37833499
http://dx.doi.org/10.1038/s41598-023-44580-y
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author Melnikov, M. Yu.
Shakirov, A. A.
Shashkin, A. A.
Huang, S. H.
Liu, C. W.
Kravchenko, S. V.
author_facet Melnikov, M. Yu.
Shakirov, A. A.
Shashkin, A. A.
Huang, S. H.
Liu, C. W.
Kravchenko, S. V.
author_sort Melnikov, M. Yu.
collection PubMed
description The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effective mass is found to be strongly enhanced and independent of the degree of spin polarization, which indicates that the mass enhancement is not related to the electrons’ spins. The observed effect turns out to be universal for silicon-based 2D electron systems, regardless of random potential, and cannot be explained by existing theories.
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spelling pubmed-105759132023-10-15 Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system Melnikov, M. Yu. Shakirov, A. A. Shashkin, A. A. Huang, S. H. Liu, C. W. Kravchenko, S. V. Sci Rep Article The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effective mass is found to be strongly enhanced and independent of the degree of spin polarization, which indicates that the mass enhancement is not related to the electrons’ spins. The observed effect turns out to be universal for silicon-based 2D electron systems, regardless of random potential, and cannot be explained by existing theories. Nature Publishing Group UK 2023-10-13 /pmc/articles/PMC10575913/ /pubmed/37833499 http://dx.doi.org/10.1038/s41598-023-44580-y Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Melnikov, M. Yu.
Shakirov, A. A.
Shashkin, A. A.
Huang, S. H.
Liu, C. W.
Kravchenko, S. V.
Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system
title Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system
title_full Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system
title_fullStr Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system
title_full_unstemmed Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system
title_short Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system
title_sort spin independence of the strongly enhanced effective mass in ultra-clean sige/si/sige two-dimensional electron system
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10575913/
https://www.ncbi.nlm.nih.gov/pubmed/37833499
http://dx.doi.org/10.1038/s41598-023-44580-y
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