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Universal protocol for the wafer-scale manufacturing of 2D carbon-based transducer layers for versatile biosensor applications

In this manuscript, we present a comprehensive fabrication protocol for high-performance graphene oxide (GO) sensor concepts. It is suitable for a variety of biosensing applications and contains the essential process steps, starting with vapor phase evaporation for siloxane monolayers, followed by s...

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Detalles Bibliográficos
Autores principales: Lu, Xiaoling, Munief, Walid-Madhat, Damborský, Pavel, Kasjanow, Alice, Katrlík, Jaroslav, Pachauri, Vivek, Ingebrandt, Sven
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10577056/
https://www.ncbi.nlm.nih.gov/pubmed/37846355
http://dx.doi.org/10.1016/j.mex.2023.102402
Descripción
Sumario:In this manuscript, we present a comprehensive fabrication protocol for high-performance graphene oxide (GO) sensor concepts. It is suitable for a variety of biosensing applications and contains the essential process steps, starting with vapor phase evaporation for siloxane monolayers, followed by spin-coating of GO as a nanometer-thin transducer with exceptional homogeneity and micromechanical surface methods which enable seamless transformation of GO transducers to be desired micro and nano dimensions. In addition to linking basic research and innovative sensor concepts with an outlook for commercial applications of point-of-care systems for early-stage diagnostics, the authors consider it necessary to take a closer look at the manufacturing processes to create more transparency and clarity, to manufacture such specific sensor concepts systematically. The detailed manufacturing approaches are intended to motivate practitioner to explore and improve this GO-based key technology. This process development is illustrated below using the manufacturing methods for three types of sensors, namely sensors based on i) surface plasmon resonance spectroscopy (SPR), ii) impedance spectroscopy and iii) bio-field effect transistors (ISFETs). The obtained results in this work prove successful GO sensor productions by achieving: • Uniform and stable immobilization of GO thin films, • High yield of sensor units on a wafer scale, here up to 96 %, • Promising integration potential for various biomedical sensor concepts to early-stage diagnostic.