Strain Engineering for Enhancing Carrier Mobility in MoTe(2) Field‐Effect Transistors

Molybdenum ditelluride (MoTe(2)) exhibits immense potential in post‐silicon electronics due to its bandgap comparable to silicon. Unlike other 2D materials, MoTe(2) allows easy phase modulation and efficient carrier type control in electrical transport. However, its unstable nature and low‐carrier m...

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Detalles Bibliográficos
Autores principales: Shafi, Abde Mayeen, Uddin, Md Gius, Cui, Xiaoqi, Ali, Fida, Ahmed, Faisal, Radwan, Mohamed, Das, Susobhan, Mehmood, Naveed, Sun, Zhipei, Lipsanen, Harri
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10582429/
https://www.ncbi.nlm.nih.gov/pubmed/37551999
http://dx.doi.org/10.1002/advs.202303437

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10582429/
https://www.ncbi.nlm.nih.gov/pubmed/37551999
http://dx.doi.org/10.1002/advs.202303437

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