Bottom Contact 100 nm Channel‐Length α‐In(2)Se(3) In‐Plane Ferroelectric Memory (Adv. Sci. 29/2023)

In‐Plane Ferroelectric Memory In article number 2303032 by Yutaka Majima and co‐workers, in‐plane (IP) ferroelectric memory effect of a 100 nm channel‐length 2D ferroelectric semiconductor α‐In(2)Se(3) stamped onto nanogap electrodes on Si/SiO(2) is demonstrated. The non‐volatile memory characterist...

Descripción completa

Detalles Bibliográficos
Autores principales: Miao, Shurong, Nitta, Ryosuke, Izawa, Seiichiro, Majima, Yutaka
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Frontispiece
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10582440/
http://dx.doi.org/10.1002/advs.202370198
Descripción
Sumario:In‐Plane Ferroelectric Memory In article number 2303032 by Yutaka Majima and co‐workers, in‐plane (IP) ferroelectric memory effect of a 100 nm channel‐length 2D ferroelectric semiconductor α‐In(2)Se(3) stamped onto nanogap electrodes on Si/SiO(2) is demonstrated. The non‐volatile memory characteristics with IP polarization including the on/off ratio reaching 103, stable retention lasting 17 hours, and endurance over 1200 cycles suggest a wide range of memory applications utilizing the lateral bottom contact structure. [Image: see text]

Ejemplares similares