Bottom Contact 100 nm Channel‐Length α‐In(2)Se(3) In‐Plane Ferroelectric Memory (Adv. Sci. 29/2023)

In‐Plane Ferroelectric Memory In article number 2303032 by Yutaka Majima and co‐workers, in‐plane (IP) ferroelectric memory effect of a 100 nm channel‐length 2D ferroelectric semiconductor α‐In(2)Se(3) stamped onto nanogap electrodes on Si/SiO(2) is demonstrated. The non‐volatile memory characterist...

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Autores principales: Miao, Shurong, Nitta, Ryosuke, Izawa, Seiichiro, Majima, Yutaka
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Frontispiece
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10582440/
http://dx.doi.org/10.1002/advs.202370198
_version_ 1785122331565228032
author Miao, Shurong
Nitta, Ryosuke
Izawa, Seiichiro
Majima, Yutaka
author_facet Miao, Shurong
Nitta, Ryosuke
Izawa, Seiichiro
Majima, Yutaka
author_sort Miao, Shurong
collection PubMed
description In‐Plane Ferroelectric Memory In article number 2303032 by Yutaka Majima and co‐workers, in‐plane (IP) ferroelectric memory effect of a 100 nm channel‐length 2D ferroelectric semiconductor α‐In(2)Se(3) stamped onto nanogap electrodes on Si/SiO(2) is demonstrated. The non‐volatile memory characteristics with IP polarization including the on/off ratio reaching 103, stable retention lasting 17 hours, and endurance over 1200 cycles suggest a wide range of memory applications utilizing the lateral bottom contact structure. [Image: see text]
format Online
Article
Text
id pubmed-10582440
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher John Wiley and Sons Inc.
record_format MEDLINE/PubMed
spelling pubmed-105824402023-10-19 Bottom Contact 100 nm Channel‐Length α‐In(2)Se(3) In‐Plane Ferroelectric Memory (Adv. Sci. 29/2023) Miao, Shurong Nitta, Ryosuke Izawa, Seiichiro Majima, Yutaka Adv Sci (Weinh) Frontispiece In‐Plane Ferroelectric Memory In article number 2303032 by Yutaka Majima and co‐workers, in‐plane (IP) ferroelectric memory effect of a 100 nm channel‐length 2D ferroelectric semiconductor α‐In(2)Se(3) stamped onto nanogap electrodes on Si/SiO(2) is demonstrated. The non‐volatile memory characteristics with IP polarization including the on/off ratio reaching 103, stable retention lasting 17 hours, and endurance over 1200 cycles suggest a wide range of memory applications utilizing the lateral bottom contact structure. [Image: see text] John Wiley and Sons Inc. 2023-10-17 /pmc/articles/PMC10582440/ http://dx.doi.org/10.1002/advs.202370198 Text en © 2023 Wiley‐VCH GmbH https://creativecommons.org/licenses/by-nc/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc/4.0/ (https://creativecommons.org/licenses/by-nc/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.
spellingShingle Frontispiece
Miao, Shurong
Nitta, Ryosuke
Izawa, Seiichiro
Majima, Yutaka
Bottom Contact 100 nm Channel‐Length α‐In(2)Se(3) In‐Plane Ferroelectric Memory (Adv. Sci. 29/2023)
title Bottom Contact 100 nm Channel‐Length α‐In(2)Se(3) In‐Plane Ferroelectric Memory (Adv. Sci. 29/2023)
title_full Bottom Contact 100 nm Channel‐Length α‐In(2)Se(3) In‐Plane Ferroelectric Memory (Adv. Sci. 29/2023)
title_fullStr Bottom Contact 100 nm Channel‐Length α‐In(2)Se(3) In‐Plane Ferroelectric Memory (Adv. Sci. 29/2023)
title_full_unstemmed Bottom Contact 100 nm Channel‐Length α‐In(2)Se(3) In‐Plane Ferroelectric Memory (Adv. Sci. 29/2023)
title_short Bottom Contact 100 nm Channel‐Length α‐In(2)Se(3) In‐Plane Ferroelectric Memory (Adv. Sci. 29/2023)
title_sort bottom contact 100 nm channel‐length α‐in(2)se(3) in‐plane ferroelectric memory (adv. sci. 29/2023)
topic Frontispiece
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10582440/
http://dx.doi.org/10.1002/advs.202370198
work_keys_str_mv AT miaoshurong bottomcontact100nmchannellengthain2se3inplaneferroelectricmemoryadvsci292023
AT nittaryosuke bottomcontact100nmchannellengthain2se3inplaneferroelectricmemoryadvsci292023
AT izawaseiichiro bottomcontact100nmchannellengthain2se3inplaneferroelectricmemoryadvsci292023
AT majimayutaka bottomcontact100nmchannellengthain2se3inplaneferroelectricmemoryadvsci292023

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