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Bottom Contact 100 nm Channel‐Length α‐In(2)Se(3) In‐Plane Ferroelectric Memory (Adv. Sci. 29/2023)
In‐Plane Ferroelectric Memory In article number 2303032 by Yutaka Majima and co‐workers, in‐plane (IP) ferroelectric memory effect of a 100 nm channel‐length 2D ferroelectric semiconductor α‐In(2)Se(3) stamped onto nanogap electrodes on Si/SiO(2) is demonstrated. The non‐volatile memory characterist...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10582440/ http://dx.doi.org/10.1002/advs.202370198 |