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Bottom Contact 100 nm Channel‐Length α‐In(2)Se(3) In‐Plane Ferroelectric Memory
Owing to the emerging trend of non‐volatile memory and data‐centric computing, the demand for more functional materials and efficient device architecture at the nanoscale is becoming stringent. To date, 2D ferroelectrics are cultivated as channel materials in field‐effect transistors for their reten...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
John Wiley and Sons Inc.
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10582452/ https://www.ncbi.nlm.nih.gov/pubmed/37565600 http://dx.doi.org/10.1002/advs.202303032 |