Enhanced Removal of Photoresist Films through Swelling and Dewetting Using Pluronic Surfactants

[Image: see text] Organic photoresist coatings, primarily composed of resins, are commonly used in the electronics industry to protect inorganic underlayers. Conventional photoresist strippers, such as amine-type agents, have shown high removal performance but led to environmental impact and substrate corrosiveness. Therefore, this trade-off must be addressed. In this study, we characterized the removal mechanism of a photoresist film using a nonionic triblock Pluronic surfactant [poly(ethylene oxide)–poly(propylene oxide)–poly(ethylene oxide)] in a ternary mixture of ethylene carbonate (EC), propylene carbonate (PC), and water. In particular, the removal dynamics determined by using a quartz crystal microbalance with dissipation monitoring was compared with those determined by performing confocal laser scanning microscopy and visual observation to analyze the morphology, adsorption mass, and viscoelasticity of the photoresist film. In the absence of the Pluronic surfactant, the photoresist film in the ternary solvent exhibited a three-step process: (i) film swelling caused by the penetration of a good solvent (EC and PC), (ii) formation of photoresist particles through dewetting, and (iii) particle aggregation on the substrate. This result was correlated to the Hansen solubility parameters. The addition of the Pluronic surfactant not only prevented photoresist aggregation in the third step but also promoted desorption from the substrate. This effect was dependent on the concentration of the Pluronic surfactant, which influenced diffusion to the interface between the photoresist and the bulk solution. Finally, we proposed a novel photoresist stripping mechanism based on the synergy between dewetting driven by an EC/PC-to-water mixture and adsorption by the Pluronic surfactant.