Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In(2)Se(3) for stacked in-memory computing array

In-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfer. Nevertheless, it necessitates a high-density memory array to effectively manage large data volumes. Here, we present a stacked ferroelectric memory...

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Detalles Bibliográficos
Autores principales: Park, Sangyong, Lee, Dongyoung, Kang, Juncheol, Choi, Hojin, Park, Jin-Hong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10600126/
https://www.ncbi.nlm.nih.gov/pubmed/37880220
http://dx.doi.org/10.1038/s41467-023-41991-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10600126/
https://www.ncbi.nlm.nih.gov/pubmed/37880220
http://dx.doi.org/10.1038/s41467-023-41991-3

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