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Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In(2)Se(3) for stacked in-memory computing array
In-memory computing is an attractive alternative for handling data-intensive tasks as it employs parallel processing without the need for data transfer. Nevertheless, it necessitates a high-density memory array to effectively manage large data volumes. Here, we present a stacked ferroelectric memory...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10600126/ https://www.ncbi.nlm.nih.gov/pubmed/37880220 http://dx.doi.org/10.1038/s41467-023-41991-3 |