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Construction of sp2/sp3 Hybrid Carbon Thin Layers on Silicon Substrates Using Nonequilibrium Excitation Reaction Fields

[Image: see text] The authors have developed a crystal growth process that utilizes electron beams from field emission (FE) to grow materials bottom-up by a method other than the transfer of thermal energy. In this study, highly crystalline single-walled carbon nanotubes were used as a field emissio...

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Autor principal: Shimoi, Norihiro
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10601078/
https://www.ncbi.nlm.nih.gov/pubmed/37901552
http://dx.doi.org/10.1021/acsomega.3c05608
_version_ 1785126119599505408
author Shimoi, Norihiro
author_facet Shimoi, Norihiro
author_sort Shimoi, Norihiro
collection PubMed
description [Image: see text] The authors have developed a crystal growth process that utilizes electron beams from field emission (FE) to grow materials bottom-up by a method other than the transfer of thermal energy. In this study, highly crystalline single-walled carbon nanotubes were used as a field emission electron source. Electron beams with high resolution energy emitted from the source were irradiated onto acetylene gas as a nonequilibrium reaction field to induce acetylene dissociation. The generated carbon ions were then irradiated onto a [100] silicon substrate, resulting in the irradiation of the silicon substrate surface with graphene. Moreover, the crystal growth of sp2/sp3 hybrid carbon thin layers, which is different from the crystal structures of graphite, diamond, and diamond-like carbon, proceeded on the surface of the silicon substrate. Carbon layers on periodic crystal structures whose growth depends at least on the morphology of the substrate are formed through bridging with the binding site of the substrate. The authors have succeeded in developing a nonthermal technique of crystal bridging between different elements. The substrate on which the carbon layer is formed is not limited to silicon; other substrates with various crystal structures and periodicities are expected to be used.
format Online
Article
Text
id pubmed-10601078
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-106010782023-10-27 Construction of sp2/sp3 Hybrid Carbon Thin Layers on Silicon Substrates Using Nonequilibrium Excitation Reaction Fields Shimoi, Norihiro ACS Omega [Image: see text] The authors have developed a crystal growth process that utilizes electron beams from field emission (FE) to grow materials bottom-up by a method other than the transfer of thermal energy. In this study, highly crystalline single-walled carbon nanotubes were used as a field emission electron source. Electron beams with high resolution energy emitted from the source were irradiated onto acetylene gas as a nonequilibrium reaction field to induce acetylene dissociation. The generated carbon ions were then irradiated onto a [100] silicon substrate, resulting in the irradiation of the silicon substrate surface with graphene. Moreover, the crystal growth of sp2/sp3 hybrid carbon thin layers, which is different from the crystal structures of graphite, diamond, and diamond-like carbon, proceeded on the surface of the silicon substrate. Carbon layers on periodic crystal structures whose growth depends at least on the morphology of the substrate are formed through bridging with the binding site of the substrate. The authors have succeeded in developing a nonthermal technique of crystal bridging between different elements. The substrate on which the carbon layer is formed is not limited to silicon; other substrates with various crystal structures and periodicities are expected to be used. American Chemical Society 2023-10-13 /pmc/articles/PMC10601078/ /pubmed/37901552 http://dx.doi.org/10.1021/acsomega.3c05608 Text en © 2023 The Author. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Shimoi, Norihiro
Construction of sp2/sp3 Hybrid Carbon Thin Layers on Silicon Substrates Using Nonequilibrium Excitation Reaction Fields
title Construction of sp2/sp3 Hybrid Carbon Thin Layers on Silicon Substrates Using Nonequilibrium Excitation Reaction Fields
title_full Construction of sp2/sp3 Hybrid Carbon Thin Layers on Silicon Substrates Using Nonequilibrium Excitation Reaction Fields
title_fullStr Construction of sp2/sp3 Hybrid Carbon Thin Layers on Silicon Substrates Using Nonequilibrium Excitation Reaction Fields
title_full_unstemmed Construction of sp2/sp3 Hybrid Carbon Thin Layers on Silicon Substrates Using Nonequilibrium Excitation Reaction Fields
title_short Construction of sp2/sp3 Hybrid Carbon Thin Layers on Silicon Substrates Using Nonequilibrium Excitation Reaction Fields
title_sort construction of sp2/sp3 hybrid carbon thin layers on silicon substrates using nonequilibrium excitation reaction fields
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10601078/
https://www.ncbi.nlm.nih.gov/pubmed/37901552
http://dx.doi.org/10.1021/acsomega.3c05608
work_keys_str_mv AT shimoinorihiro constructionofsp2sp3hybridcarbonthinlayersonsiliconsubstratesusingnonequilibriumexcitationreactionfields