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Integration of Carbon Nanotubes in an HFCVD Diamond Synthesis Process in a Methane-Rich H(2)/CH(4) Gas Mixture

In this work, we present experimental data on carbon nanotubes integration during diamond synthesis. Carbon nanotubes layers were preliminarily deposited on silicon and diamond substrates, after which the substrates were loaded into the HFCVD reactor for further growth of the diamond phase. The CVD...

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Autores principales: Mitulinsky, Alexander, Gaydaychuk, Alexander, Zenkin, Sergei, Meisner, Stanislav, Bulakh, Vlada, Linnik, Stepan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10607995/
https://www.ncbi.nlm.nih.gov/pubmed/37895737
http://dx.doi.org/10.3390/ma16206755
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author Mitulinsky, Alexander
Gaydaychuk, Alexander
Zenkin, Sergei
Meisner, Stanislav
Bulakh, Vlada
Linnik, Stepan
author_facet Mitulinsky, Alexander
Gaydaychuk, Alexander
Zenkin, Sergei
Meisner, Stanislav
Bulakh, Vlada
Linnik, Stepan
author_sort Mitulinsky, Alexander
collection PubMed
description In this work, we present experimental data on carbon nanotubes integration during diamond synthesis. Carbon nanotubes layers were preliminarily deposited on silicon and diamond substrates, after which the substrates were loaded into the HFCVD reactor for further growth of the diamond phase. The CVD process was held in an argon-free H(2)/CH(4) working gas mixture without the use of a catalyst for carbon nanotubes growth. It is shown that in a wide range of studied working gas composition (CH(4) concentration up to 28.6 vol.%) nanotubes etched from the substrate surface before the diamond growth process began.
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spelling pubmed-106079952023-10-28 Integration of Carbon Nanotubes in an HFCVD Diamond Synthesis Process in a Methane-Rich H(2)/CH(4) Gas Mixture Mitulinsky, Alexander Gaydaychuk, Alexander Zenkin, Sergei Meisner, Stanislav Bulakh, Vlada Linnik, Stepan Materials (Basel) Article In this work, we present experimental data on carbon nanotubes integration during diamond synthesis. Carbon nanotubes layers were preliminarily deposited on silicon and diamond substrates, after which the substrates were loaded into the HFCVD reactor for further growth of the diamond phase. The CVD process was held in an argon-free H(2)/CH(4) working gas mixture without the use of a catalyst for carbon nanotubes growth. It is shown that in a wide range of studied working gas composition (CH(4) concentration up to 28.6 vol.%) nanotubes etched from the substrate surface before the diamond growth process began. MDPI 2023-10-19 /pmc/articles/PMC10607995/ /pubmed/37895737 http://dx.doi.org/10.3390/ma16206755 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Mitulinsky, Alexander
Gaydaychuk, Alexander
Zenkin, Sergei
Meisner, Stanislav
Bulakh, Vlada
Linnik, Stepan
Integration of Carbon Nanotubes in an HFCVD Diamond Synthesis Process in a Methane-Rich H(2)/CH(4) Gas Mixture
title Integration of Carbon Nanotubes in an HFCVD Diamond Synthesis Process in a Methane-Rich H(2)/CH(4) Gas Mixture
title_full Integration of Carbon Nanotubes in an HFCVD Diamond Synthesis Process in a Methane-Rich H(2)/CH(4) Gas Mixture
title_fullStr Integration of Carbon Nanotubes in an HFCVD Diamond Synthesis Process in a Methane-Rich H(2)/CH(4) Gas Mixture
title_full_unstemmed Integration of Carbon Nanotubes in an HFCVD Diamond Synthesis Process in a Methane-Rich H(2)/CH(4) Gas Mixture
title_short Integration of Carbon Nanotubes in an HFCVD Diamond Synthesis Process in a Methane-Rich H(2)/CH(4) Gas Mixture
title_sort integration of carbon nanotubes in an hfcvd diamond synthesis process in a methane-rich h(2)/ch(4) gas mixture
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10607995/
https://www.ncbi.nlm.nih.gov/pubmed/37895737
http://dx.doi.org/10.3390/ma16206755
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