Simulation-Based Analysis of the Effect of Alpha Irradiation on GaN Particle Detectors

Radiation-hardened semiconductor GaN has drawn considerable attention owing to its excellent properties such as large displacement energy. Many studies have focused on evaluating the degradation of GaN-based power device performance by proton beam or particle irradiation, while quantitative analysis...

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Detalles Bibliográficos
Autores principales: Lei, Jianming, Wang, Nan, Jiang, Rukai, Hou, Qianyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10608986/
https://www.ncbi.nlm.nih.gov/pubmed/37893309
http://dx.doi.org/10.3390/mi14101872

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10608986/
https://www.ncbi.nlm.nih.gov/pubmed/37893309
http://dx.doi.org/10.3390/mi14101872

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