Cargando…

Simulation-Based Analysis of the Effect of Alpha Irradiation on GaN Particle Detectors

Radiation-hardened semiconductor GaN has drawn considerable attention owing to its excellent properties such as large displacement energy. Many studies have focused on evaluating the degradation of GaN-based power device performance by proton beam or particle irradiation, while quantitative analysis...

Descripción completa

Detalles Bibliográficos
Autores principales:	Lei, Jianming, Wang, Nan, Jiang, Rukai, Hou, Qianyu
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10608986/ https://www.ncbi.nlm.nih.gov/pubmed/37893309 http://dx.doi.org/10.3390/mi14101872

Ejemplares similares

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors
por: Sandupatla, Abhinay, et al.
Publicado: (2020)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
por: Wang, Haiping, et al.
Publicado: (2022)

Simulations of Operation Dynamics of Different Type GaN Particle Sensors
por: Gaubas, Eugenijus, et al.
Publicado: (2015)

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency
por: Sandupatla, Abhinay, et al.
Publicado: (2019)

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate
por: Wu, Peng, et al.
Publicado: (2022)

Physics-Based TCAD Simulation and Calibration of 600 V GaN/AlGaN/GaN Device Characteristics and Analysis of Interface Traps †
por: Song, Yu-Lin, et al.
Publicado: (2021)

Theoretical Nanoarchitectonics of GaN Nanowires for Ultraviolet Irradiation-Dependent Electromechanical Properties
por: Yang, Kun, et al.
Publicado: (2023)

Mechanical Properties of GaN Single Crystals upon C Ion Irradiation: Nanoindentation Analysis
por: Dong, Zhaohui, et al.
Publicado: (2022)

The Role of GaN in the Heterostructure WS(2)/GaN for SERS Applications
por: Ko, Tsung-Shine, et al.
Publicado: (2023)

A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor
por: Meng, Qingzhi, et al.
Publicado: (2021)

Proton irradiation of GaN transistor based power supply operating in the linear region
por: Devine, James, et al.
Publicado: (2020)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
por: Arteev, Dmitri S., et al.
Publicado: (2022)

Laser slice thinning of GaN-on-GaN high electron mobility transistors
por: Tanaka, Atsushi, et al.
Publicado: (2022)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
por: Badokas, Kazimieras, et al.
Publicado: (2022)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
por: Ma, Maodan, et al.
Publicado: (2022)

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
por: Grabowski, Mikolaj, et al.
Publicado: (2021)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2015)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2017)

Amphoteric arsenic in GaN
por: Wahl, U, et al.
Publicado: (2007)

Investigation of AlGaN/GaN HFET and VO(2) Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers
por: Bayram, Ferhat, et al.
Publicado: (2020)

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
por: Avit, Geoffrey, et al.
Publicado: (2021)

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes
por: Hu, Hongpo, et al.
Publicado: (2017)

Modelling of proton irradiated GaN-based high-power white light-emitting diodes
por: Floriduz, Alessandro, et al.
Publicado: (2018)

SERS performance of GaN/Ag substrates fabricated by Ag coating of GaN platforms
por: Zając, Magdalena A, et al.
Publicado: (2023)

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer
por: He, Wei, et al.
Publicado: (2022)

Nucleation control for the growth of vertically aligned GaN nanowires
por: Hou, Wen-Chi, et al.
Publicado: (2012)

Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
por: Wang, Yongjin, et al.
Publicado: (2011)

Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure
por: Zhao, Ying, et al.
Publicado: (2020)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
por: Weng, You-Chen, et al.
Publicado: (2023)

The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications
por: Yang, Haojun, et al.
Publicado: (2017)

Intensive measures of luminescence in GaN/InGaN heterostructures
por: Hsiao, Jui-Ju, et al.
Publicado: (2019)

Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs
por: Guo, Huaixin, et al.
Publicado: (2020)

Simulation Optimization of AlGaN/GaN SBD with Field Plate Structures and Recessed Anode
por: Xu, Tao, et al.
Publicado: (2023)

Evaluation on Temperature-Dependent Transient V(T) Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization
por: Wang, Rui, et al.
Publicado: (2022)

Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode
por: Wang, Ying, et al.
Publicado: (2020)

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
por: Hu, Xiao-Long, et al.
Publicado: (2015)

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
por: Zhang, Lei, et al.
Publicado: (2014)

Graphene/AlGaN/GaN RF Switch
por: Yashchyshyn, Yevhen, et al.
Publicado: (2021)

A Hybrid Readout Solution for GaN-Based Detectors Using CMOS Technology †
por: Padmanabhan, Preethi, et al.
Publicado: (2018)

Cannot write session to /tmp/vufind_sessions/sess_68fug2tfsjrrh5ivtk9vu65rkp