High-Performance Vertical Light-Emitting Transistors Based on ZnO Transistor/Quantum-Dot Light-Emitting Diode Integration and Electron Injection Layer Modification

Vertical light-emitting transistors (VLETs) consisting of vertically stacked unipolar transistors and organic light-emitting diodes (OLEDs) have been proposed as a prospective building block for display technologies. In addition to OLEDs, quantum-dot (QD) LEDs (QLEDs) with high brightness and high c...

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Detalles Bibliográficos
Autores principales: Chang, Jui-Fen, Yu, Jia-Min
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609005/
https://www.ncbi.nlm.nih.gov/pubmed/37893370
http://dx.doi.org/10.3390/mi14101933

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609005/
https://www.ncbi.nlm.nih.gov/pubmed/37893370
http://dx.doi.org/10.3390/mi14101933

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