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Characterization of Mechanical Oscillations in Bismuth Selenide Nanowires at Low Temperatures

A single transistor preamplifier circuit was designed to facilitate electrical detection of mechanical oscillations in nanoelectromechanical systems (NEMSs) at low temperatures. The amplifier was integrated in the close vicinity of the nanowire inside the cryostat to minimize cabling load and interf...

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Detalles Bibliográficos
Autores principales: Jasulaneca, Liga, Poplausks, Raimonds, Prikulis, Juris, Dzene, Elza, Yager, Tom, Erts, Donats
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609109/
https://www.ncbi.nlm.nih.gov/pubmed/37893347
http://dx.doi.org/10.3390/mi14101910
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author Jasulaneca, Liga
Poplausks, Raimonds
Prikulis, Juris
Dzene, Elza
Yager, Tom
Erts, Donats
author_facet Jasulaneca, Liga
Poplausks, Raimonds
Prikulis, Juris
Dzene, Elza
Yager, Tom
Erts, Donats
author_sort Jasulaneca, Liga
collection PubMed
description A single transistor preamplifier circuit was designed to facilitate electrical detection of mechanical oscillations in nanoelectromechanical systems (NEMSs) at low temperatures. The amplifier was integrated in the close vicinity of the nanowire inside the cryostat to minimize cabling load and interference. The function of the circuit was impedance conversion for current flow measurements in NEMSs with a high internal resistance. The circuit was tested to operate at temperatures as low as 5 K and demonstrated the ability to detect oscillations in double-clamped bismuth selenide nanowires upon excitation by a 0.1 MHz–10 MHz AC signal applied to a mechanically separated gate electrode. A strong resonance frequency dependency on temperature was observed. A relatively weak shift in the oscillation amplitude and resonance frequency was measured when a DC bias voltage was applied to the gate electrode at a constant temperature.
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spelling pubmed-106091092023-10-28 Characterization of Mechanical Oscillations in Bismuth Selenide Nanowires at Low Temperatures Jasulaneca, Liga Poplausks, Raimonds Prikulis, Juris Dzene, Elza Yager, Tom Erts, Donats Micromachines (Basel) Article A single transistor preamplifier circuit was designed to facilitate electrical detection of mechanical oscillations in nanoelectromechanical systems (NEMSs) at low temperatures. The amplifier was integrated in the close vicinity of the nanowire inside the cryostat to minimize cabling load and interference. The function of the circuit was impedance conversion for current flow measurements in NEMSs with a high internal resistance. The circuit was tested to operate at temperatures as low as 5 K and demonstrated the ability to detect oscillations in double-clamped bismuth selenide nanowires upon excitation by a 0.1 MHz–10 MHz AC signal applied to a mechanically separated gate electrode. A strong resonance frequency dependency on temperature was observed. A relatively weak shift in the oscillation amplitude and resonance frequency was measured when a DC bias voltage was applied to the gate electrode at a constant temperature. MDPI 2023-10-07 /pmc/articles/PMC10609109/ /pubmed/37893347 http://dx.doi.org/10.3390/mi14101910 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Jasulaneca, Liga
Poplausks, Raimonds
Prikulis, Juris
Dzene, Elza
Yager, Tom
Erts, Donats
Characterization of Mechanical Oscillations in Bismuth Selenide Nanowires at Low Temperatures
title Characterization of Mechanical Oscillations in Bismuth Selenide Nanowires at Low Temperatures
title_full Characterization of Mechanical Oscillations in Bismuth Selenide Nanowires at Low Temperatures
title_fullStr Characterization of Mechanical Oscillations in Bismuth Selenide Nanowires at Low Temperatures
title_full_unstemmed Characterization of Mechanical Oscillations in Bismuth Selenide Nanowires at Low Temperatures
title_short Characterization of Mechanical Oscillations in Bismuth Selenide Nanowires at Low Temperatures
title_sort characterization of mechanical oscillations in bismuth selenide nanowires at low temperatures
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609109/
https://www.ncbi.nlm.nih.gov/pubmed/37893347
http://dx.doi.org/10.3390/mi14101910
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