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A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques
Wearable medical devices (WMDs) that continuously monitor health conditions enable people to stay healthy in everyday situations. A wristband is a monitoring format that can measure bioelectric signals. The main part of a wearable device is its analog front end (AFE). Wearables have issues such as l...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609258/ https://www.ncbi.nlm.nih.gov/pubmed/37893253 http://dx.doi.org/10.3390/mi14101816 |
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author | Tamilarasan, Esther Duraisamy, Gracia Nirmala Rani Elangovan, Muthu Kumaran Sarasam, Arun Samuel Thankmony |
author_facet | Tamilarasan, Esther Duraisamy, Gracia Nirmala Rani Elangovan, Muthu Kumaran Sarasam, Arun Samuel Thankmony |
author_sort | Tamilarasan, Esther |
collection | PubMed |
description | Wearable medical devices (WMDs) that continuously monitor health conditions enable people to stay healthy in everyday situations. A wristband is a monitoring format that can measure bioelectric signals. The main part of a wearable device is its analog front end (AFE). Wearables have issues such as low reliability, high power consumption, and large size. A conventional AFE device uses more analog-to-digital converters, amplifiers, and filters for individual electrodes. Our proposed MUX-based AFE design requires fewer components than a conventional AFE device, reducing power consumption and area. It includes a single-ended differential feedback operational transconductance amplifier (OTA) and n-pass MUX-based AFE circuits which are related to the emergence of low power, low area, and low cost AFE-integrated chips that are required for wearable biomedical applications. The proposed 6T n-pass multiplexer measures a gain of −68 dB across a frequency range of 100 kHz with a 136.5 nW power consumption and a delay of 0.07 ns. The design layout area is approximately 9.8 µm(2) and uses 45 nm complementary metal oxide semiconductor (CMOS) technology. Additionally, the proposed single-ended differential OTA has an obtained input referred noise of 0.014 µV(rms), and a gain of −5.5 dB, while the design layout area is about 2 µm(2) and was designed with the help of the Cadence Virtuoso layout design tool. |
format | Online Article Text |
id | pubmed-10609258 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-106092582023-10-28 A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques Tamilarasan, Esther Duraisamy, Gracia Nirmala Rani Elangovan, Muthu Kumaran Sarasam, Arun Samuel Thankmony Micromachines (Basel) Article Wearable medical devices (WMDs) that continuously monitor health conditions enable people to stay healthy in everyday situations. A wristband is a monitoring format that can measure bioelectric signals. The main part of a wearable device is its analog front end (AFE). Wearables have issues such as low reliability, high power consumption, and large size. A conventional AFE device uses more analog-to-digital converters, amplifiers, and filters for individual electrodes. Our proposed MUX-based AFE design requires fewer components than a conventional AFE device, reducing power consumption and area. It includes a single-ended differential feedback operational transconductance amplifier (OTA) and n-pass MUX-based AFE circuits which are related to the emergence of low power, low area, and low cost AFE-integrated chips that are required for wearable biomedical applications. The proposed 6T n-pass multiplexer measures a gain of −68 dB across a frequency range of 100 kHz with a 136.5 nW power consumption and a delay of 0.07 ns. The design layout area is approximately 9.8 µm(2) and uses 45 nm complementary metal oxide semiconductor (CMOS) technology. Additionally, the proposed single-ended differential OTA has an obtained input referred noise of 0.014 µV(rms), and a gain of −5.5 dB, while the design layout area is about 2 µm(2) and was designed with the help of the Cadence Virtuoso layout design tool. MDPI 2023-09-23 /pmc/articles/PMC10609258/ /pubmed/37893253 http://dx.doi.org/10.3390/mi14101816 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Tamilarasan, Esther Duraisamy, Gracia Nirmala Rani Elangovan, Muthu Kumaran Sarasam, Arun Samuel Thankmony A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques |
title | A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques |
title_full | A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques |
title_fullStr | A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques |
title_full_unstemmed | A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques |
title_short | A 0.8 V, 14.76 nVrms, Multiplexer-Based AFE for Wearable Devices Using 45 nm CMOS Techniques |
title_sort | 0.8 v, 14.76 nvrms, multiplexer-based afe for wearable devices using 45 nm cmos techniques |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609258/ https://www.ncbi.nlm.nih.gov/pubmed/37893253 http://dx.doi.org/10.3390/mi14101816 |
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