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Optimized Design of a Hexagonal Equal Gap Silicon Drift Detector with Arbitrary Surface Electric Field Spiral

In our previous studies, the silicon drift detector (SDD) structure with a constant spiral ring cathode gap (g) and a given surface electric field has been partially investigated based on the physical model that gives an analytical solution to the integrals in the calculations. Those results show th...

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Autores principales: Sun, Jiaxiong, Li, Zheng, Li, Xiaodan, Liu, Manwen, Wang, Hongfei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609318/
https://www.ncbi.nlm.nih.gov/pubmed/37893380
http://dx.doi.org/10.3390/mi14101943
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author Sun, Jiaxiong
Li, Zheng
Li, Xiaodan
Liu, Manwen
Wang, Hongfei
author_facet Sun, Jiaxiong
Li, Zheng
Li, Xiaodan
Liu, Manwen
Wang, Hongfei
author_sort Sun, Jiaxiong
collection PubMed
description In our previous studies, the silicon drift detector (SDD) structure with a constant spiral ring cathode gap (g) and a given surface electric field has been partially investigated based on the physical model that gives an analytical solution to the integrals in the calculations. Those results show that the detector has excellent electrical characteristics with a very homogeneous carrier drift electric field. In order to cope with the implementation of the theoretical approach with a complete set of technical parameters, this paper performs different theoretical algorithms for the technical implementation of the detector performance using the Taylor expansion method to construct a model for cases where the parameter “j” is a non-integer, approximating the solution with finite terms. To verify the accuracy of this situation, we performed a simulation of the relevant electrical properties using the Sentaurus TCAD tool 2018. The electrical properties of the single and double-sided detectors are first compared, and then the effects of different equal gaps g (g = 10 μm, 20 μm, and 25 μm, respectively) on the electrical properties of the double-sided detectors are analyzed and demonstrated. By analyzing and comparing the electrical characteristics data from the simulation results, we can show that the double-sided structure has a larger transverse drift electric field, which improves the spatial position resolution as well as the response speed. The effect of the gap size on the electrical characteristics of the detector is also analyzed by analyzing three different gap bifacial detectors, and the results show that a 10 μm equal gap is the optimal design. Such results can be used in applications requiring large-area SDD, such as the pulsar X-ray autonomous navigation. in the future to provide navigation and positioning space services for spacecraft deep-space exploration.
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spelling pubmed-106093182023-10-28 Optimized Design of a Hexagonal Equal Gap Silicon Drift Detector with Arbitrary Surface Electric Field Spiral Sun, Jiaxiong Li, Zheng Li, Xiaodan Liu, Manwen Wang, Hongfei Micromachines (Basel) Article In our previous studies, the silicon drift detector (SDD) structure with a constant spiral ring cathode gap (g) and a given surface electric field has been partially investigated based on the physical model that gives an analytical solution to the integrals in the calculations. Those results show that the detector has excellent electrical characteristics with a very homogeneous carrier drift electric field. In order to cope with the implementation of the theoretical approach with a complete set of technical parameters, this paper performs different theoretical algorithms for the technical implementation of the detector performance using the Taylor expansion method to construct a model for cases where the parameter “j” is a non-integer, approximating the solution with finite terms. To verify the accuracy of this situation, we performed a simulation of the relevant electrical properties using the Sentaurus TCAD tool 2018. The electrical properties of the single and double-sided detectors are first compared, and then the effects of different equal gaps g (g = 10 μm, 20 μm, and 25 μm, respectively) on the electrical properties of the double-sided detectors are analyzed and demonstrated. By analyzing and comparing the electrical characteristics data from the simulation results, we can show that the double-sided structure has a larger transverse drift electric field, which improves the spatial position resolution as well as the response speed. The effect of the gap size on the electrical characteristics of the detector is also analyzed by analyzing three different gap bifacial detectors, and the results show that a 10 μm equal gap is the optimal design. Such results can be used in applications requiring large-area SDD, such as the pulsar X-ray autonomous navigation. in the future to provide navigation and positioning space services for spacecraft deep-space exploration. MDPI 2023-10-18 /pmc/articles/PMC10609318/ /pubmed/37893380 http://dx.doi.org/10.3390/mi14101943 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Sun, Jiaxiong
Li, Zheng
Li, Xiaodan
Liu, Manwen
Wang, Hongfei
Optimized Design of a Hexagonal Equal Gap Silicon Drift Detector with Arbitrary Surface Electric Field Spiral
title Optimized Design of a Hexagonal Equal Gap Silicon Drift Detector with Arbitrary Surface Electric Field Spiral
title_full Optimized Design of a Hexagonal Equal Gap Silicon Drift Detector with Arbitrary Surface Electric Field Spiral
title_fullStr Optimized Design of a Hexagonal Equal Gap Silicon Drift Detector with Arbitrary Surface Electric Field Spiral
title_full_unstemmed Optimized Design of a Hexagonal Equal Gap Silicon Drift Detector with Arbitrary Surface Electric Field Spiral
title_short Optimized Design of a Hexagonal Equal Gap Silicon Drift Detector with Arbitrary Surface Electric Field Spiral
title_sort optimized design of a hexagonal equal gap silicon drift detector with arbitrary surface electric field spiral
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609318/
https://www.ncbi.nlm.nih.gov/pubmed/37893380
http://dx.doi.org/10.3390/mi14101943
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