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SEU Hardened D Flip-Flop Design with Low Area Overhead

D flip-flop (DFF) is the basic unit of sequential logic in digital circuits. However, because of an internal cross-coupled inverter pair, it can easily appear as a single event upset (SEU) when hit by high-energy particles, resulting in the error in the value stored in the flip-flop. On this basis,...

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Autores principales: Yin, Chenyu, Zhou, Yulun, Liu, Hongxia, Xiang, Qi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609415/
https://www.ncbi.nlm.nih.gov/pubmed/37893273
http://dx.doi.org/10.3390/mi14101836
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author Yin, Chenyu
Zhou, Yulun
Liu, Hongxia
Xiang, Qi
author_facet Yin, Chenyu
Zhou, Yulun
Liu, Hongxia
Xiang, Qi
author_sort Yin, Chenyu
collection PubMed
description D flip-flop (DFF) is the basic unit of sequential logic in digital circuits. However, because of an internal cross-coupled inverter pair, it can easily appear as a single event upset (SEU) when hit by high-energy particles, resulting in the error in the value stored in the flip-flop. On this basis, a new structure D flip-flop is proposed in this paper. This flip-flop uses an asymmetric scheme in which the master–slave latch adopts different hardening structures. By sacrificing circuit speed in exchange for stronger SEU fortification capability, the SEU threshold of this structure is improved by 10 times compared to traditional D flip-flops. It has also been compared with Dual Interlocked Storage Elements (DICEs), and it saves the area cost of six transistors compared to the DICE structure. Under the same operating conditions, the average power consumption and peak power consumption are, respectively, 9.8% and 18.8% lower than those of the DICE circuit, making it suitable for soft radiation environments where high circuit speed is not a critical requirement.
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spelling pubmed-106094152023-10-28 SEU Hardened D Flip-Flop Design with Low Area Overhead Yin, Chenyu Zhou, Yulun Liu, Hongxia Xiang, Qi Micromachines (Basel) Article D flip-flop (DFF) is the basic unit of sequential logic in digital circuits. However, because of an internal cross-coupled inverter pair, it can easily appear as a single event upset (SEU) when hit by high-energy particles, resulting in the error in the value stored in the flip-flop. On this basis, a new structure D flip-flop is proposed in this paper. This flip-flop uses an asymmetric scheme in which the master–slave latch adopts different hardening structures. By sacrificing circuit speed in exchange for stronger SEU fortification capability, the SEU threshold of this structure is improved by 10 times compared to traditional D flip-flops. It has also been compared with Dual Interlocked Storage Elements (DICEs), and it saves the area cost of six transistors compared to the DICE structure. Under the same operating conditions, the average power consumption and peak power consumption are, respectively, 9.8% and 18.8% lower than those of the DICE circuit, making it suitable for soft radiation environments where high circuit speed is not a critical requirement. MDPI 2023-09-27 /pmc/articles/PMC10609415/ /pubmed/37893273 http://dx.doi.org/10.3390/mi14101836 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Yin, Chenyu
Zhou, Yulun
Liu, Hongxia
Xiang, Qi
SEU Hardened D Flip-Flop Design with Low Area Overhead
title SEU Hardened D Flip-Flop Design with Low Area Overhead
title_full SEU Hardened D Flip-Flop Design with Low Area Overhead
title_fullStr SEU Hardened D Flip-Flop Design with Low Area Overhead
title_full_unstemmed SEU Hardened D Flip-Flop Design with Low Area Overhead
title_short SEU Hardened D Flip-Flop Design with Low Area Overhead
title_sort seu hardened d flip-flop design with low area overhead
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609415/
https://www.ncbi.nlm.nih.gov/pubmed/37893273
http://dx.doi.org/10.3390/mi14101836
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