Cargando…
High-Q Quasi-Bound States in the Continuum in Terahertz All-Silicon Metasurfaces
Bound states in the continuum (BIC)-based all-silicon metasurfaces have attracted widespread attention in recent years because of their high quality (Q) factors in terahertz (THz) frequencies. Here, we propose and experimentally demonstrate an all-silicon BIC metasurface consisting of an air-hole ar...
Autores principales: | , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609513/ https://www.ncbi.nlm.nih.gov/pubmed/37893254 http://dx.doi.org/10.3390/mi14101817 |
_version_ | 1785128031281479680 |
---|---|
author | Jiao, Ruiqing Wang, Qing Liu, Jianjun Shu, Fangzhou Pan, Guiming Jing, Xufeng Hong, Zhi |
author_facet | Jiao, Ruiqing Wang, Qing Liu, Jianjun Shu, Fangzhou Pan, Guiming Jing, Xufeng Hong, Zhi |
author_sort | Jiao, Ruiqing |
collection | PubMed |
description | Bound states in the continuum (BIC)-based all-silicon metasurfaces have attracted widespread attention in recent years because of their high quality (Q) factors in terahertz (THz) frequencies. Here, we propose and experimentally demonstrate an all-silicon BIC metasurface consisting of an air-hole array on a Si substrate. BICs originated from low-order TE and TM guided mode resonances (GMRs) induced by (1,0) and (1,1) Rayleigh diffraction of metagratings, which were numerically investigated. The results indicate that the GMRs and their Q-factors are easily excited and manipulated by breaking the lattice symmetry through changes in the position or radius of the air-holes, while the resonance frequencies are less sensitive to these changes. The measured Q-factor of the GMRs is as high as 490. The high-Q metasurfaces have potential applications in THz modulators, biosensors, and other photonic devices. |
format | Online Article Text |
id | pubmed-10609513 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-106095132023-10-28 High-Q Quasi-Bound States in the Continuum in Terahertz All-Silicon Metasurfaces Jiao, Ruiqing Wang, Qing Liu, Jianjun Shu, Fangzhou Pan, Guiming Jing, Xufeng Hong, Zhi Micromachines (Basel) Article Bound states in the continuum (BIC)-based all-silicon metasurfaces have attracted widespread attention in recent years because of their high quality (Q) factors in terahertz (THz) frequencies. Here, we propose and experimentally demonstrate an all-silicon BIC metasurface consisting of an air-hole array on a Si substrate. BICs originated from low-order TE and TM guided mode resonances (GMRs) induced by (1,0) and (1,1) Rayleigh diffraction of metagratings, which were numerically investigated. The results indicate that the GMRs and their Q-factors are easily excited and manipulated by breaking the lattice symmetry through changes in the position or radius of the air-holes, while the resonance frequencies are less sensitive to these changes. The measured Q-factor of the GMRs is as high as 490. The high-Q metasurfaces have potential applications in THz modulators, biosensors, and other photonic devices. MDPI 2023-09-23 /pmc/articles/PMC10609513/ /pubmed/37893254 http://dx.doi.org/10.3390/mi14101817 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Jiao, Ruiqing Wang, Qing Liu, Jianjun Shu, Fangzhou Pan, Guiming Jing, Xufeng Hong, Zhi High-Q Quasi-Bound States in the Continuum in Terahertz All-Silicon Metasurfaces |
title | High-Q Quasi-Bound States in the Continuum in Terahertz All-Silicon Metasurfaces |
title_full | High-Q Quasi-Bound States in the Continuum in Terahertz All-Silicon Metasurfaces |
title_fullStr | High-Q Quasi-Bound States in the Continuum in Terahertz All-Silicon Metasurfaces |
title_full_unstemmed | High-Q Quasi-Bound States in the Continuum in Terahertz All-Silicon Metasurfaces |
title_short | High-Q Quasi-Bound States in the Continuum in Terahertz All-Silicon Metasurfaces |
title_sort | high-q quasi-bound states in the continuum in terahertz all-silicon metasurfaces |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609513/ https://www.ncbi.nlm.nih.gov/pubmed/37893254 http://dx.doi.org/10.3390/mi14101817 |
work_keys_str_mv | AT jiaoruiqing highqquasiboundstatesinthecontinuuminterahertzallsiliconmetasurfaces AT wangqing highqquasiboundstatesinthecontinuuminterahertzallsiliconmetasurfaces AT liujianjun highqquasiboundstatesinthecontinuuminterahertzallsiliconmetasurfaces AT shufangzhou highqquasiboundstatesinthecontinuuminterahertzallsiliconmetasurfaces AT panguiming highqquasiboundstatesinthecontinuuminterahertzallsiliconmetasurfaces AT jingxufeng highqquasiboundstatesinthecontinuuminterahertzallsiliconmetasurfaces AT hongzhi highqquasiboundstatesinthecontinuuminterahertzallsiliconmetasurfaces |