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Fluoride passivation of ZnO electron transport layers for efficient PbSe colloidal quantum dot photovoltaics
Lead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Higher Education Press
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10611680/ https://www.ncbi.nlm.nih.gov/pubmed/37889375 http://dx.doi.org/10.1007/s12200-023-00082-3 |
Sumario: | Lead selenide (PbSe) colloidal quantum dots (CQDs) are suitable for the development of the next-generation of photovoltaics (PVs) because of efficient multiple-exciton generation and strong charge coupling ability. To date, the reported high-efficient PbSe CQD PVs use spin-coated zinc oxide (ZnO) as the electron transport layer (ETL). However, it is found that the surface defects of ZnO present a difficulty in completion of passivation, and this impedes the continuous progress of devices. To address this disadvantage, fluoride (F) anions are employed for the surface passivation of ZnO through a chemical bath deposition method (CBD). The F-passivated ZnO ETL possesses decreased densities of oxygen vacancy and a favorable band alignment. Benefiting from these improvements, PbSe CQD PVs report an efficiency of 10.04%, comparatively 9.4% higher than that of devices using sol-gel (SG) ZnO as ETL. We are optimistic that this interface passivation strategy has great potential in the development of solution-processed CQD optoelectronic devices. GRAPHICAL ABSTRACT: [Image: see text] SUPPLEMENTARY INFORMATION: The online version contains supplementary material available at 10.1007/s12200-023-00082-3. |
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