Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emission

Direct band gap GeSn alloys have recently emerged as promising lasing source materials for monolithic integration on Si substrate. In this work, optically pumped mid-infrared GeSn lasers were studied with the observation of dual-wavelength lasing at 2187 nm and 2460 nm. Two simultaneous lasing regio...

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Detalles Bibliográficos
Autores principales: Abernathy, Grey, Ojo, Solomon, Said, Abdulla, Grant, Joshua M., Zhou, Yiyin, Stanchu, Hryhorii, Du, Wei, Li, Baohua, Yu, Shui-Qing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10613283/
https://www.ncbi.nlm.nih.gov/pubmed/37898710
http://dx.doi.org/10.1038/s41598-023-45916-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10613283/
https://www.ncbi.nlm.nih.gov/pubmed/37898710
http://dx.doi.org/10.1038/s41598-023-45916-4

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