DFT calculations and giant dielectric responses in (Ni(1/3)Nb(2/3))(x)Ti(1−x)O(2)

The origins of dielectric responses in Ni(2+) and Nb(5+) co-doped TiO(2) were explored considering intrinsic and extrinsic effects. DFT calculations demonstrated that Ni(2+) doping induced oxygen vacancies, while Nb(5+) doping generated free electrons. Theoretical predictions indicated complex defect dipoles forming in the rutile structure, contributing to overall dielectric responses. Theoretical calculations also showed a possible linear alignment of Ni(2+)–2Nb(5+) without oxygen vacancies, especially in high doping concentrations. Experimentally, (Ni(1/3)Nb(2/3))(x)Ti(1−x)O(2) ceramics (x = 1%, 2.5%, and 10%) were synthesized. The substantial dielectric response at room temperature, attributed to factors like defect dipoles and grain boundary/surface barrier layer capacitor (GBLC/SBLC) effects, increased with higher doping levels. However, in a temperature range where GBLC/SBLC effects were suppressed, the dielectric response decreased with increased doping, likely due to self-charge compensation between Ni(2+)–2N(b5+). Notably, (Ni(1/3)Nb(2/3))(x)Ti(1−x)O(2) with x = 2.5% exhibited a high dielectric permittivity of 10(4) and a low loss tangent of 0.029 at 1 kHz. Moreover, the dielectric permittivity changed by less than ±15% (compared to 25 °C) at 150 °C. This work provides an understanding of the origins of dielectric responses in co-doped TiO(2) and optimizes the doping concentration to achieve the best dielectric performance.