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Atomistic mechanisms of water vapor–induced surface passivation

The microscopic mechanisms underpinning the spontaneous surface passivation of metals from ubiquitous water have remained largely elusive. Here, using in situ environmental electron microscopy to atomically monitor the reaction dynamics between aluminum surfaces and water vapor, we provide direct ex...

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Autores principales: Chen, Xiaobo, Shan, Weitao, Wu, Dongxiang, Patel, Shyam Bharatkumar, Cai, Na, Li, Chaoran, Ye, Shuonan, Liu, Zhao, Hwang, Sooyeon, Zakharov, Dmitri N., Boscoboinik, Jorge Anibal, Wang, Guofeng, Zhou, Guangwen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10619940/
https://www.ncbi.nlm.nih.gov/pubmed/37910618
http://dx.doi.org/10.1126/sciadv.adh5565
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author Chen, Xiaobo
Shan, Weitao
Wu, Dongxiang
Patel, Shyam Bharatkumar
Cai, Na
Li, Chaoran
Ye, Shuonan
Liu, Zhao
Hwang, Sooyeon
Zakharov, Dmitri N.
Boscoboinik, Jorge Anibal
Wang, Guofeng
Zhou, Guangwen
author_facet Chen, Xiaobo
Shan, Weitao
Wu, Dongxiang
Patel, Shyam Bharatkumar
Cai, Na
Li, Chaoran
Ye, Shuonan
Liu, Zhao
Hwang, Sooyeon
Zakharov, Dmitri N.
Boscoboinik, Jorge Anibal
Wang, Guofeng
Zhou, Guangwen
author_sort Chen, Xiaobo
collection PubMed
description The microscopic mechanisms underpinning the spontaneous surface passivation of metals from ubiquitous water have remained largely elusive. Here, using in situ environmental electron microscopy to atomically monitor the reaction dynamics between aluminum surfaces and water vapor, we provide direct experimental evidence that the surface passivation results in a bilayer oxide film consisting of a crystalline-like Al(OH)(3) top layer and an inner layer of amorphous Al(2)O(3). The Al(OH)(3) layer maintains a constant thickness of ~5.0 Å, while the inner Al(2)O(3) layer grows at the Al(2)O(3)/Al interface to a limiting thickness. On the basis of experimental data and atomistic modeling, we show the tunability of the dissociation pathways of H(2)O molecules with the Al, Al(2)O(3), and Al(OH)(3) surface terminations. The fundamental insights may have practical significance for the design of materials and reactions for two seemingly disparate but fundamentally related disciplines of surface passivation and catalytic H(2) production from water.
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spelling pubmed-106199402023-11-02 Atomistic mechanisms of water vapor–induced surface passivation Chen, Xiaobo Shan, Weitao Wu, Dongxiang Patel, Shyam Bharatkumar Cai, Na Li, Chaoran Ye, Shuonan Liu, Zhao Hwang, Sooyeon Zakharov, Dmitri N. Boscoboinik, Jorge Anibal Wang, Guofeng Zhou, Guangwen Sci Adv Physical and Materials Sciences The microscopic mechanisms underpinning the spontaneous surface passivation of metals from ubiquitous water have remained largely elusive. Here, using in situ environmental electron microscopy to atomically monitor the reaction dynamics between aluminum surfaces and water vapor, we provide direct experimental evidence that the surface passivation results in a bilayer oxide film consisting of a crystalline-like Al(OH)(3) top layer and an inner layer of amorphous Al(2)O(3). The Al(OH)(3) layer maintains a constant thickness of ~5.0 Å, while the inner Al(2)O(3) layer grows at the Al(2)O(3)/Al interface to a limiting thickness. On the basis of experimental data and atomistic modeling, we show the tunability of the dissociation pathways of H(2)O molecules with the Al, Al(2)O(3), and Al(OH)(3) surface terminations. The fundamental insights may have practical significance for the design of materials and reactions for two seemingly disparate but fundamentally related disciplines of surface passivation and catalytic H(2) production from water. American Association for the Advancement of Science 2023-11-01 /pmc/articles/PMC10619940/ /pubmed/37910618 http://dx.doi.org/10.1126/sciadv.adh5565 Text en Copyright © 2023 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY). https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution license (https://creativecommons.org/licenses/by/4.0/) , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Physical and Materials Sciences
Chen, Xiaobo
Shan, Weitao
Wu, Dongxiang
Patel, Shyam Bharatkumar
Cai, Na
Li, Chaoran
Ye, Shuonan
Liu, Zhao
Hwang, Sooyeon
Zakharov, Dmitri N.
Boscoboinik, Jorge Anibal
Wang, Guofeng
Zhou, Guangwen
Atomistic mechanisms of water vapor–induced surface passivation
title Atomistic mechanisms of water vapor–induced surface passivation
title_full Atomistic mechanisms of water vapor–induced surface passivation
title_fullStr Atomistic mechanisms of water vapor–induced surface passivation
title_full_unstemmed Atomistic mechanisms of water vapor–induced surface passivation
title_short Atomistic mechanisms of water vapor–induced surface passivation
title_sort atomistic mechanisms of water vapor–induced surface passivation
topic Physical and Materials Sciences
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10619940/
https://www.ncbi.nlm.nih.gov/pubmed/37910618
http://dx.doi.org/10.1126/sciadv.adh5565
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