Epitaxial Growth of (−201) β-Ga(2)O(3) on (001) Diamond Substrates

[Image: see text] Heteroepitaxial growth of β-Ga(2)O(3) on (001) diamond by metal–organic chemical vapor deposition (MOCVD) is reported. A detailed study was performed with Transmission Electron Microscopy (TEM) elucidating the epitaxial relation of (−201) β-Ga(2)O(3)||(001) diamond and [010]/[−13–2...

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Autores principales: Nandi, Arpit, Cherns, David, Sanyal, Indraneel, Kuball, Martin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10626569/
https://www.ncbi.nlm.nih.gov/pubmed/37937192
http://dx.doi.org/10.1021/acs.cgd.3c00972
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author Nandi, Arpit
Cherns, David
Sanyal, Indraneel
Kuball, Martin
author_facet Nandi, Arpit
Cherns, David
Sanyal, Indraneel
Kuball, Martin
author_sort Nandi, Arpit
collection PubMed
description [Image: see text] Heteroepitaxial growth of β-Ga(2)O(3) on (001) diamond by metal–organic chemical vapor deposition (MOCVD) is reported. A detailed study was performed with Transmission Electron Microscopy (TEM) elucidating the epitaxial relation of (−201) β-Ga(2)O(3)||(001) diamond and [010]/[−13–2] β-Ga(2)O(3) ||[110]/[1–10] diamond, with the presence of different crystallographically related epitaxial variants apparent from selected area diffraction patterns. A model explaining the arrangement of atoms along ⟨110⟩ diamond is demonstrated with a lattice mismatch of 1.03–3.66% in the perpendicular direction. Dark field imaging showed evidence of arrays of discrete defects at the boundaries between different grains. Strategies to reduce the density of defects are discussed.
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spelling pubmed-106265692023-11-07 Epitaxial Growth of (−201) β-Ga(2)O(3) on (001) Diamond Substrates Nandi, Arpit Cherns, David Sanyal, Indraneel Kuball, Martin Cryst Growth Des [Image: see text] Heteroepitaxial growth of β-Ga(2)O(3) on (001) diamond by metal–organic chemical vapor deposition (MOCVD) is reported. A detailed study was performed with Transmission Electron Microscopy (TEM) elucidating the epitaxial relation of (−201) β-Ga(2)O(3)||(001) diamond and [010]/[−13–2] β-Ga(2)O(3) ||[110]/[1–10] diamond, with the presence of different crystallographically related epitaxial variants apparent from selected area diffraction patterns. A model explaining the arrangement of atoms along ⟨110⟩ diamond is demonstrated with a lattice mismatch of 1.03–3.66% in the perpendicular direction. Dark field imaging showed evidence of arrays of discrete defects at the boundaries between different grains. Strategies to reduce the density of defects are discussed. American Chemical Society 2023-10-16 /pmc/articles/PMC10626569/ /pubmed/37937192 http://dx.doi.org/10.1021/acs.cgd.3c00972 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Nandi, Arpit
Cherns, David
Sanyal, Indraneel
Kuball, Martin
Epitaxial Growth of (−201) β-Ga(2)O(3) on (001) Diamond Substrates
title Epitaxial Growth of (−201) β-Ga(2)O(3) on (001) Diamond Substrates
title_full Epitaxial Growth of (−201) β-Ga(2)O(3) on (001) Diamond Substrates
title_fullStr Epitaxial Growth of (−201) β-Ga(2)O(3) on (001) Diamond Substrates
title_full_unstemmed Epitaxial Growth of (−201) β-Ga(2)O(3) on (001) Diamond Substrates
title_short Epitaxial Growth of (−201) β-Ga(2)O(3) on (001) Diamond Substrates
title_sort epitaxial growth of (−201) β-ga(2)o(3) on (001) diamond substrates
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10626569/
https://www.ncbi.nlm.nih.gov/pubmed/37937192
http://dx.doi.org/10.1021/acs.cgd.3c00972
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