Cargando…
Epitaxial Growth of (−201) β-Ga(2)O(3) on (001) Diamond Substrates
[Image: see text] Heteroepitaxial growth of β-Ga(2)O(3) on (001) diamond by metal–organic chemical vapor deposition (MOCVD) is reported. A detailed study was performed with Transmission Electron Microscopy (TEM) elucidating the epitaxial relation of (−201) β-Ga(2)O(3)||(001) diamond and [010]/[−13–2...
Autores principales: | Nandi, Arpit, Cherns, David, Sanyal, Indraneel, Kuball, Martin |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
|
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10626569/ https://www.ncbi.nlm.nih.gov/pubmed/37937192 http://dx.doi.org/10.1021/acs.cgd.3c00972 |
Ejemplares similares
-
Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates
por: Pantle, Florian, et al.
Publicado: (2021) -
Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates
por: Pantle, Florian, et al.
Publicado: (2023) -
Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon
por: Qiu, Y., et al.
Publicado: (2015) -
Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy
por: Diep, Nhu Quynh, et al.
Publicado: (2019) -
Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
por: Sorokin, Sergey V., et al.
Publicado: (2020)