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Defect-Mediated Atomic Layer Etching Processes on Cl–Si(100): An Atomistic Insight
[Image: see text] Defects play a significant role in atomic layer etching (ALE) processes; however, a fundamental understanding at the atomic level is still lacking. To bridge this knowledge gap, this study investigated the role of point defects in the laser-induced ALE of Cl–Si(100) using density f...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10626627/ https://www.ncbi.nlm.nih.gov/pubmed/37937159 http://dx.doi.org/10.1021/acs.jpcc.3c05378 |