Computational-fitting method for mobility extraction in GaN HEMT

The third-generation semiconductor gallium nitride (GaN) has drawn wide attention due to its high electron mobility property. However, the classical mobility calculation methods such as Hall effect and transfer length method have limitations in accurately extracting the mobility of GaN High Electron...

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Detalles Bibliográficos
Autores principales: Chang, Kuan-Chang, Feng, Xibei, Liu, Huangbai, Liu, Kai, Lin, Xinnan, Li, Lei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10628775/
https://www.ncbi.nlm.nih.gov/pubmed/37942456
http://dx.doi.org/10.1039/d3ra06630d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10628775/
https://www.ncbi.nlm.nih.gov/pubmed/37942456
http://dx.doi.org/10.1039/d3ra06630d

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