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A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p–n heterojunction for fast response optoelectronic devices
Due to the unique combination configuration and the formation of a built-in electric field, mixed-dimensional heterojunctions present fruitful possibilities for improving the optoelectronic performances of low-dimensional optoelectronic devices. However, the response times of most photodetectors bui...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
RSC
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10629003/ https://www.ncbi.nlm.nih.gov/pubmed/37941949 http://dx.doi.org/10.1039/d3na00525a |
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author | Hu, Huijie Zhen, Weili Yue, Zhilai Niu, Rui Xu, Feng Zhu, Wanli Jiao, Keke Long, Mingsheng Xi, Chuanying Zhu, Wenka Zhang, Changjin |
author_facet | Hu, Huijie Zhen, Weili Yue, Zhilai Niu, Rui Xu, Feng Zhu, Wanli Jiao, Keke Long, Mingsheng Xi, Chuanying Zhu, Wenka Zhang, Changjin |
author_sort | Hu, Huijie |
collection | PubMed |
description | Due to the unique combination configuration and the formation of a built-in electric field, mixed-dimensional heterojunctions present fruitful possibilities for improving the optoelectronic performances of low-dimensional optoelectronic devices. However, the response times of most photodetectors built from mixed-dimensional heterojunctions are within the millisecond range, limiting their applications in fast response optoelectronic devices. Herein, a mixed-dimensional BiSeI/GaSe van der Waals heterostructure is designed, which exhibits visible light detection ability and competitive photoresponsivity of 750 A W(−1) and specific detectivity of 2.25 × 10(12) Jones under 520 nm laser excitation. Excitingly, the device displays a very fast response time, e.g., the rise time and decay time under 520 nm laser excitation are 65 μs and 190 μs, respectively. Our findings provide a prospective approach to mixed-dimensional heterojunction photodetection devices with rapid switching capabilities. |
format | Online Article Text |
id | pubmed-10629003 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | RSC |
record_format | MEDLINE/PubMed |
spelling | pubmed-106290032023-11-08 A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p–n heterojunction for fast response optoelectronic devices Hu, Huijie Zhen, Weili Yue, Zhilai Niu, Rui Xu, Feng Zhu, Wanli Jiao, Keke Long, Mingsheng Xi, Chuanying Zhu, Wenka Zhang, Changjin Nanoscale Adv Chemistry Due to the unique combination configuration and the formation of a built-in electric field, mixed-dimensional heterojunctions present fruitful possibilities for improving the optoelectronic performances of low-dimensional optoelectronic devices. However, the response times of most photodetectors built from mixed-dimensional heterojunctions are within the millisecond range, limiting their applications in fast response optoelectronic devices. Herein, a mixed-dimensional BiSeI/GaSe van der Waals heterostructure is designed, which exhibits visible light detection ability and competitive photoresponsivity of 750 A W(−1) and specific detectivity of 2.25 × 10(12) Jones under 520 nm laser excitation. Excitingly, the device displays a very fast response time, e.g., the rise time and decay time under 520 nm laser excitation are 65 μs and 190 μs, respectively. Our findings provide a prospective approach to mixed-dimensional heterojunction photodetection devices with rapid switching capabilities. RSC 2023-10-06 /pmc/articles/PMC10629003/ /pubmed/37941949 http://dx.doi.org/10.1039/d3na00525a Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/ |
spellingShingle | Chemistry Hu, Huijie Zhen, Weili Yue, Zhilai Niu, Rui Xu, Feng Zhu, Wanli Jiao, Keke Long, Mingsheng Xi, Chuanying Zhu, Wenka Zhang, Changjin A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p–n heterojunction for fast response optoelectronic devices |
title | A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p–n heterojunction for fast response optoelectronic devices |
title_full | A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p–n heterojunction for fast response optoelectronic devices |
title_fullStr | A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p–n heterojunction for fast response optoelectronic devices |
title_full_unstemmed | A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p–n heterojunction for fast response optoelectronic devices |
title_short | A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p–n heterojunction for fast response optoelectronic devices |
title_sort | mixed-dimensional quasi-1d bisei nanowire-2d gase nanosheet p–n heterojunction for fast response optoelectronic devices |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10629003/ https://www.ncbi.nlm.nih.gov/pubmed/37941949 http://dx.doi.org/10.1039/d3na00525a |
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