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Synthesis of 3,3′-dihydroxy-2,2′-diindan-1,1′-dione derivatives for tautomeric organic semiconductors exhibiting intramolecular double proton transfer

To investigate potential applications of the 3,3′-dihydroxy-2,2′-biindan-1,1′-dione (BIT) structure as an organic semiconductor with intramolecular hydrogen bonds, a new synthetic route under mild conditions is developed based on the addition reaction of 1,3-dione to ninhydrin and the subsequent hyd...

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Detalles Bibliográficos
Autores principales: Nakano, Kyohei, Leong, Iat Wai, Hashizume, Daisuke, Bulgarevich, Kirill, Takimiya, Kazuo, Nishiyama, Yusuke, Yamazaki, Toshio, Tajima, Keisuke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10631252/
https://www.ncbi.nlm.nih.gov/pubmed/37969578
http://dx.doi.org/10.1039/d3sc04125e
Descripción
Sumario:To investigate potential applications of the 3,3′-dihydroxy-2,2′-biindan-1,1′-dione (BIT) structure as an organic semiconductor with intramolecular hydrogen bonds, a new synthetic route under mild conditions is developed based on the addition reaction of 1,3-dione to ninhydrin and the subsequent hydrogenation of the hydroxyl group. This route affords several new BIT derivatives, including asymmetrically substituted structures that are difficult to access by conventional high-temperature synthesis. The BIT derivatives exhibit rapid tautomerization by intramolecular double proton transfer in solution. The tautomerizations are also observed in the solid state by variable temperature measurements of X-ray diffractometry and magic angle spinning (13)C solid-state NMR. Possible interplay between the double proton transfer and the charge transport is suggested by quantum chemical calculations. The monoalkylated BIT derivative with a lamellar packing structure suitable for lateral charge transport in films shows a hole mobility of up to 0.012 cm(2) V(−1) s(−1) with a weak temperature dependence in an organic field effect transistor.