Rear textured p-type high temperature passivating contacts and their implementation in perovskite/silicon tandem cells

Silicon solar cells based on high temperature passivating contacts are becoming mainstream in the photovoltaic industry. Here, we developed a high-quality boron-doped poly-silicon hole contact. When combined with a co-processed phosphorus-doped poly-silicon electron contact, high-voltage silicon bot...

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Detalles Bibliográficos
Autores principales: Walter, Arnaud, Kamino, Brett A., Moon, Soo-Jin, Wyss, Patrick, Diaz Leon, Juan J., Allebé, Christophe, Descoeudres, Antoine, Nicolay, Sylvain, Ballif, Christophe, Jeangros, Quentin, Ingenito, Andrea
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10634458/
https://www.ncbi.nlm.nih.gov/pubmed/38013933
http://dx.doi.org/10.1039/d3ya00048f
Descripción
Sumario:Silicon solar cells based on high temperature passivating contacts are becoming mainstream in the photovoltaic industry. Here, we developed a high-quality boron-doped poly-silicon hole contact. When combined with a co-processed phosphorus-doped poly-silicon electron contact, high-voltage silicon bottom cells could be demonstrated and included in 28.25%-efficient perovskite/Si tandems. The active area was 4 cm(2) active area and the front electrode was screen-printed.

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