Cargando…

Dynamical characteristics of AC-driven hybrid WSe(2) monolayer/AlGaInP quantum wells light-emitting device

The exploration of functional light-emitting devices and numerous optoelectronic applications can be accomplished on an elegant platform provided by rapidly developing transition metal dichalcogenides (TMDCs). However, TMDCs-based light emitting devices encounter certain serious difficulties, such a...

Descripción completa

Detalles Bibliográficos
Autores principales:	Konthoujam, James Singh, Lin, Yen-Shou, Chang, Ya-Hui, Lin, Hsiang-Ting, Chang, Chiao-Yun, Zhang, Yu-Wei, Lin, Shih-Yen, Kuo, Hao-Chung, Shih, Min-Hsiung
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2023
Materias:	Research
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10635932/ https://www.ncbi.nlm.nih.gov/pubmed/37943364 http://dx.doi.org/10.1186/s11671-023-03920-7

Ejemplares similares

Optical Mode Tuning of Monolayer Tungsten Diselenide (WSe(2)) by Integrating with One-Dimensional Photonic Crystal through Exciton–Photon Coupling
por: James Singh, Konthoujam, et al.
Publicado: (2022)

AlGaInP light-emitting diodes with SACNTs as current-spreading layer
por: Guo, Xia, et al.
Publicado: (2014)

AlGaInP Red LEDs with Hollow Hemispherical Polystyrene Arrays
por: Cheng, Wen-Ching, et al.
Publicado: (2018)

Red-Shifted Excitation and Two-Photon Pumping of Biointegrated GaInP/AlGaInP Quantum Well Microlasers
por: Titze, Vera M., et al.
Publicado: (2022)

Photonic Crystal Circular Nanobeam Cavity Laser with Type-II GaSb/GaAs Quantum Rings as Gain Material
por: Lin, Hsiang-Ting, et al.
Publicado: (2020)

Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots
por: Ryu, Ho-Soung, et al.
Publicado: (2015)

Chemomechanical modification of quantum emission in monolayer WSe(2)
por: Utama, M. Iqbal Bakti, et al.
Publicado: (2023)

Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED
por: Park, Juhyuk, et al.
Publicado: (2022)

Dicing of composite substrate for thin film AlGaInP power LEDs by wet etching
por: Horng, Ray-Hua, et al.
Publicado: (2021)

Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar In(x)Ga(1−x)N/GaN Multiple Quantum Wells
por: Chen, Cheng-Chang, et al.
Publicado: (2021)

Synthetic WSe(2) monolayers with high photoluminescence quantum yield
por: Kim, Hyungjin, et al.
Publicado: (2019)

Optically initialized robust valley-polarized holes in monolayer WSe(2)
por: Hsu, Wei-Ting, et al.
Publicado: (2015)

Corrigendum: Optically initialized robust valley-polarized holes in monolayer WSe(2)
por: Hsu, Wei-Ting, et al.
Publicado: (2016)

Evidence of indirect gap in monolayer WSe(2)
por: Hsu, Wei-Ting, et al.
Publicado: (2017)

Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process
por: Jung, Byung Oh, et al.
Publicado: (2021)

A gate-free monolayer WSe(2) pn diode
por: Chen, Jhih-Wei, et al.
Publicado: (2018)

Valley depolarization in monolayer WSe2
por: Yan, Tengfei, et al.
Publicado: (2015)

Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission
por: Kang, Chang-Mo, et al.
Publicado: (2017)

Enhancing carrier transport and carrier capture with a good current spreading characteristic via graphene transparent conductive electrodes in InGaN/GaN multiple-quantum-well light emitting diodes
por: Feng, Shih-Wei, et al.
Publicado: (2020)

Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period In(0.2)Ga(0.8)N/GaN Quantum Wells of Blue LEDs
por: Wang, Hsiang-Chen, et al.
Publicado: (2017)

Efficient phonon cascades in WSe(2) monolayers
por: Paradisanos, Ioannis, et al.
Publicado: (2021)

AlGaInP LED with low-speed spin-coating silver nanowires as transparent conductive layer
por: Guo, Xia, et al.
Publicado: (2014)

Carrier localization in In-rich InGaN/GaN multiple quantum wells for green light-emitting diodes
por: Jeong, Hyun, et al.
Publicado: (2015)

Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT
por: Shen, Yao-Luen, et al.
Publicado: (2023)

Probing the origin of excitonic states in monolayer WSe(2)
por: Huang, Jiani, et al.
Publicado: (2016)

Dissociation of two-dimensional excitons in monolayer WSe(2)
por: Massicotte, Mathieu, et al.
Publicado: (2018)

Charge-tuneable biexciton complexes in monolayer WSe(2)
por: Barbone, Matteo, et al.
Publicado: (2018)

Quick Optical Identification of the Defect Formation in Monolayer WSe(2) for Growth Optimization
por: Fang, Long, et al.
Publicado: (2019)

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration
por: Qi, Longheng, et al.
Publicado: (2023)

Exciton-polaron Rydberg states in monolayer MoSe(2) and WSe(2)
por: Liu, Erfu, et al.
Publicado: (2021)

High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots
por: Huang, Yu-Ming, et al.
Publicado: (2021)

Electronic and Magnetic Properties of Defected Monolayer WSe(2) with Vacancies
por: Yang, Danxi, et al.
Publicado: (2019)

First-Principles Determination of Ultralow Thermal Conductivity of monolayer WSe(2)
por: Zhou, Wu-Xing, et al.
Publicado: (2015)

High Quality Factor Mechanical Resonators Based on WSe(2) Monolayers
por: Morell, Nicolas, et al.
Publicado: (2016)

Cascaded emission of single photons from the biexciton in monolayered WSe(2)
por: He, Yu-Ming, et al.
Publicado: (2016)

Efficient generation of neutral and charged biexcitons in encapsulated WSe(2) monolayers
por: Ye, Ziliang, et al.
Publicado: (2018)

Methane-Mediated Vapor Transport Growth of Monolayer WSe(2) Crystals
por: Jang, Hyeon-Sik, et al.
Publicado: (2019)

A Simulation Study of Carrier Capture Ability of the Last InGaN Quantum Well with Different Indium Content for Yellow-Light-Emitting InGaN/GaN Multiple Quantum Wells
por: Liu, Wei, et al.
Publicado: (2023)

Narrow-band high-lying excitons with negative-mass electrons in monolayer WSe(2)
por: Lin, Kai-Qiang, et al.
Publicado: (2021)

All-inorganic perovskite quantum dot light-emitting memories
por: Yen, Meng-Cheng, et al.
Publicado: (2021)

Cannot write session to /tmp/vufind_sessions/sess_k8u9vovmv2oar6t0oq24eggjfi